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參數(shù)資料
| 型號(hào)： | ATF-541M4-TR1 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 X 1.20 MM, 0.70 MM HEIGHT, LEAD FREE, LEADLESS, MINIPAK-4 |
| 文件頁(yè)數(shù)： | 5/17頁(yè) |
| 文件大?。?/td> | 731K |
| 代理商： | ATF-541M4-TR1 |
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1
Resistor R3 is calculated based on desired V
ds, Ids and
available power supply voltage.
R3 = V
DD – Vds
(1)
I
ds + IBB
V
DD is the power supply voltage.
V
ds is the device drain to source voltage.
I
ds is the desired drain current.
I
BB is the current flowing through the R1/R2 resistor volt
age divider network.
The value of resistors R1 and R2 are calculated with the
following formulas
R1 = V
gs
(2)
I
BB
R2 = (V
ds – Vgs) R1
(3)
V
gs
Example Circuit
V
DD = 5 V
V
ds = 3V
I
ds = 60 mA
V
gs = 0.58 V
Choose I
BB to be at least 10X the maximum expected
gate leakage current. I
BB was chosen to be 2 mA for this
example. Using equations (1), (2), and (3) the resistors are
calculated as follows
R1 = 290
R2 = 1210
R3 = 32.3
Active Bias
Active biasing provides a means of keeping the quies
cent bias point constant over temperature and constant
over lot to lot variations in device dc performance. The
advantage of the active biasing of an enhancement
mode PHEMT versus a depletion mode PHEMT is that a
negative power source is not required. The techniques
of active biasing an enhancement mode device are very
similar to those used to bias a bipolar junction transis
tor.
INPUT
C1
C
L1
R5
R6
R
R1
Q
Vdd
R4
L
L4
Q1
Zo
C4
C5
C6
OUTPUT
Figure 4. Typical ATF-541M4 LNA with Active Biasing.
R1 and R2 provide a constant voltage source at the base
of a PNP transistor at Q2. The constant voltage at the
base of Q2 is raised by 0.7 volts at the emitter. The con
stant emitter voltage plus the regulated V
DD supply are
present across resistor R3. Constant voltage across R3
provides a constant current supply for the drain current.
Resistors R1 and R2 are used to set the desired V
ds. The
combined series value of these resistors also sets the
amount of extra current consumed by the bias network.
The equations that describe the circuit’s operation are as
follows.
V
E = Vds + (Ids R4)
(1)
R3 = V
DD – VE
(2)
I
ds
V
B = VE – VBE
(3)
V
B = R1
V
DD
(4)
R1 + R2
V
DD = IBB (R1 + R2)
(5)
Rearranging equation (4)
provides the following formula
R2 = R
1 (VDD – VB)
(4A)
V
B
An active bias scheme is shown in Figure 24.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-55143-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-541M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF55143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
| ATF-55143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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