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| 型號： | ATF-541M4-TR1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 X 1.20 MM, 0.70 MM HEIGHT, LEAD FREE, LEADLESS, MINIPAK-4 |
| 文件頁數(shù)： | 15/17頁 |
| 文件大?。?/td> | 731K |
| 代理商： | ATF-541M4-TR1 |
ATF-541M4 Typical Scattering Parameters, V
DS = V, IDS = 60 mA
Freq.
GHz
S
11
S
1
S
1
S
MSG/MAG
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.99
17.6
28.36
26.18
168.9
0.01
85.1
0.54
11.3
34.18
0.5
0.87
74.7
26.04
20.03
133.9
0.03
54.2
0.41
48.1
28.25
0.9
0.78
110.7
23.13
14.34
113.5
0.04
41.8
0.30
70.1
25.54
1.0
0.76
117.6
22.42
13.22
109.4
0.04
40.2
0.28
74.9
25.19
1.5
0.72
140.1
19.54
9.49
95.1
0.05
34.6
0.20
92.5
22.78
1.9
0.70
152.6
17.73
7.70
86.9
0.05
32.8
0.17
103.3
21.88
2.0
0.70
157.5
17.19
7.24
85.7
0.05
33.5
0.14
108.9
21.61
2.5
0.69
170.4
15.45
5.92
77.9
0.05
34.1
0.12
122.4
20.73
3.0
0.69
179.9
13.91
4.96
70.8
0.06
33.4
0.10
138.7
19.17
4.0
0.69
165.7
11.53
3.77
58.3
0.07
32.8
0.10
164.1
15.26
5.0
0.70
153.8
9.66
3.04
46.8
0.08
32.0
0.09
174.9
13.21
6.0
0.71
138.8
8.25
2.58
34.8
0.09
28.2
0.11
162.9
11.80
7.0
0.71
128.6
6.89
2.21
24.4
0.10
25.1
0.12
149.1
10.30
8.0
0.73
118.6
5.76
1.94
14.3
0.11
21.1
0.14
138.7
9.42
9.0
0.74
109.2
4.72
1.72
4.4
0.12
16.6
0.17
129.5
8.46
10.0
0.76
99.9
3.80
1.55
5.7
0.13
11.2
0.19
119.3
7.86
11.0
0.77
89.7
3.03
1.42
16.0
0.14
5.5
0.23
108.8
7.21
12.0
0.79
81.5
2.23
1.29
26.3
0.15
1.1
0.27
98.6
6.73
13.0
0.80
71.8
1.45
1.18
36.3
0.16
8.7
0.32
89.2
6.11
14.0
0.83
61.7
0.58
1.07
47.4
0.17
15.6
0.38
80.3
5.98
15.0
0.85
52.2
0.31
0.96
58.1
0.17
23.4
0.44
71.7
5.54
16.0
0.86
42.1
1.41
0.85
67.9
0.17
31.6
0.49
64.3
4.75
17.0
0.90
33.2
2.34
0.76
76.8
0.17
38.7
0.57
58.8
5.73
18.0
0.90
24.3
3.53
0.67
84.8
0.17
45.8
0.62
54.7
4.51
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements
made at 16 different impedances using an ATN NP5 test system.
From these measurements a true Fmin is calculated. Refer to the
noise parameter application section for more information.
2. Refer to the applications section for additional information on
the test fixture used for the measurement of the s and noise
parameters.
Typical Noise Parameters, V
DS = V, IDS = 60 mA
Freq
GHz
F
min
dB
Γ
opt
Mag.
Γ
opt
Ang.
R
n/50
G
a
dB
0.5
0.12
0.37
13.2
0.05
27.06
0.9
0.16
0.34
10.9
0.06
22.88
1.0
0.19
0.21
30.8
0.04
22.44
1.9
0.45
0.22
102.9
0.05
19.17
2.0
0.46
0.21
104.2
0.05
18.69
2.4
0.57
0.23
125.2
0.05
17.57
3.0
0.62
0.30
149.0
0.04
16.26
3.9
0.80
0.35
173.1
0.04
14.54
5.0
1.02
0.43
168.3
0.05
12.97
5.8
1.17
0.46
155.8
0.06
11.85
6.0
1.22
0.51
146.4
0.09
10.98
7.0
1.41
0.52
137.0
0.11
10.03
8.0
1.49
0.54
129.5
0.15
9.66
9.0
1.69
0.56
115.1
0.25
8.82
10.0
1.87
0.61
99.8
0.40
8.32
Figure 16. MSG/MAG and |S1| vs. Frequency
at V, 60 mA.
MSG
MAG
FREQUENCY (GHz)
MSG/MAG
and
|S
1
|(dB)
0
10
5
15
40
5
0
5
0
15
10
5
0
-5
-10
|S1|
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-55143-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-541M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF55143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
| ATF-55143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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