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參數(shù)資料
| 型號： | ATF-541M4-TR1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 X 1.20 MM, 0.70 MM HEIGHT, LEAD FREE, LEADLESS, MINIPAK-4 |
| 文件頁數(shù)： | 11/17頁 |
| 文件大?。?/td> | 731K |
| 代理商： | ATF-541M4-TR1 |
ATF-541M4 Electrical Specifications
T
A = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
V
gs
Operational Gate Voltage
Vds = 3V, Ids = 60 mA
V
0.4
0.58
0.75
V
th
Threshold Voltage
Vds = 3V, Ids = 4 mA
V
0.18
0.36
0.52
I
dss
Saturated Drain Current
Vds = 3V, Vgs = 0V
A
—
0.28
5
G
m
Transconductance
Vds = 3V, gm = Idss/Vgs;
Vgs = 0.75–0.7 = 0.05V
mmho 230
398
560
I
gss
Gate Leakage Current
Vgd = Vgs = 3V
A
—
200
NF
Noise Figure[1]
f = 2 GHz
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
dB
—
0.5
0.9
—
Gain
Gain[1]
f = 2 GHz
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
dB
15.5
—
17.5
18.1
18.5
—
OIP3
Output 3rd Order
Intercept Point[1]
f = 2 GHz
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
dBm
33
—
35.8
35.9
—
P1dB
1dB Compressed
Output Power[1]
f = 2 GHz
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
dBm
—
21.4
22.1
—
Notes:
1. Measurements obtained using production test board described in Figure 4.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0. dB loss)
Input
Matching Circuit
Γ_mag = 0.11
Γ_ang = 141
(0.5 dB loss)
Output
Matching Circuit
Γ_mag = 0.14
Γ_ang = -16
(0.5 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0. dB loss)
Output
Figure 4. Block diagram of GHz production test board used for Noise Figure, Gain, P1dB, OIP, and OIP measurements. This circuit represents a trade-off
between an optimal noise match, maximum OIP match and associated impedance matching circuit losses. Circuit losses have been de-embedded from
actual measurements.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Fmin
Minimum Noise Figure[2]
f = 900 GHz
f = 2 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 3V, Ids = 60 mA
dB
—
0.16
0.46
0.8
1.17
—
Ga
Associated Gain[2]
f = 900 GHz
f = 2 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 3V, Ids = 60 mA
dB
—
22.4
18.7
14.5
11.9
—
OIP3
Output 3rd Order
Intercept Point[3]
f = 900 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
dBm
—
35
35.1
36.6
37.6
—
P1dB
1dB Compressed
Output Power[3]
f = 900 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
dBm
—
19.5
20.8
20.4
19.4
—
Notes:
2. Fmin and associated gain at minimum noise figure (Ga) values are based on a set of 16 noise figure measurements made at 16 different
impedances using an ATN NP5 test system. From these measurements a true Fmin and Ga is calculated. Refer to the noise parameter application
section for more information.
3. P1dB and OIP3 measurements made in an InterContinental Microwave (ICM) test fixture with double stub tuners and bias tees. The input was
tuned for minimum noise figure and the output was tuned for maximum OIP3.
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| ATF-55143-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-541M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF55143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
| ATF-55143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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