參數(shù)資料
型號： ATF-531P8-BLK
元件分類： 小信號晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝： 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8
文件頁數(shù)： 4/15頁
文件大?。?/td> 248K
代理商： ATF-531P8-BLK
1
Notes:
1. F
min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F
min is
calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
ATF-531P8 Typical Scattering Parameters, V
DS = 3V, IDS = 135 mA
Freq.
S
11
S
1
S
1
S
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.823
57.1
33.96 49.888
151.3
37.72 0.013
62.6
0.427
55.1
35.84
0.2
0.826
95.6
31.82 38.989
131.6
33.98 0.020
45.7
0.418
92.8
32.90
0.3
0.842
118.2
29.66 30.415
119.6
32.77 0.023
36.0
0.421
115.9
31.21
0.4
0.846
133.1
27.75 24.416
111.4
32.04 0.025
30.1
0.420
130.7
29.90
0.5
0.851
142.0
26.21 20.452
105.9
31.70 0.026
26.8
0.419
139.0
28.96
0.6
0.850
149.2
24.83 17.443
101.4
31.37 0.027
24.4
0.419
146.4
28.10
0.7
0.855
154.9
23.62 15.178
97.7
31.37 0.027
22.9
0.419
151.9
27.50
0.8
0.856
159.5
22.55 13.405
94.7
31.06 0.028
22.1
0.420
156.1
26.80
0.9
0.859
163.2
21.59 12.012
92.0
31.06 0.028
21.4
0.421
159.7
26.32
1
0.857
166.3
20.71 10.853
89.6
30.75 0.029
21.1
0.419
162.6
25.73
1.5
0.857
177.7
17.32 7.342
79.9
30.46 0.030
21.0
0.418
172.9
23.89
1.9
0.858
175.8
15.31 5.828
73.6
29.90 0.032
21.6
0.418
178.2
22.60
2
0.855
174.4
15.08 5.676
72.3
29.37 0.034
22.1
0.410
179.1
22.23
2.4
0.855
168.8
13.51 4.738
66.4
29.12 0.035
22.6
0.403
176.0
21.32
3
0.854
161.4
11.54 3.774
58.2
28.40 0.038
22.8
0.409
169.8
19.97
4
0.858
150.7
8.98
2.812
45.3
27.13 0.044
22.7
0.423
161.0
16.15
5
0.860
140.4
6.92
2.219
32.8
26.02 0.050
20.7
0.440
152.8
13.82
6
0.868
131.4
5.21
1.821
21.0
24.88 0.057
17.2
0.457
144.4
12.31
7
0.866
123.2
3.79
1.547
9.4
23.88 0.064
13.4
0.475
136.6
10.81
8
0.877
114.8
2.52
1.337
2.0
22.85 0.072
8.5
0.490
128.0
10.00
9
0.876
106.3
1.57
1.198
13.7
21.83 0.081
2.6
0.502
119.3
9.09
10
0.880
95.1
0.56
1.066
26.0
21.11 0.088
5.0
0.519
108.7
8.20
11
0.883
84.7
0.46 0.948
38.2
20.35 0.096
12.9
0.530
98.4
7.31
12
0.874
73.6
1.51 0.840
49.6
19.83 0.102
20.7
0.566
90.7
6.06
13
0.878
62.9
2.56 0.745
61.1
19.41 0.107
28.5
0.613
79.7
5.32
14
0.884
56.9
3.54 0.665
71.0
18.94 0.113
35.9
0.652
69.3
4.87
15
0.906
46.7
4.70 0.582
80.8
18.71 0.116
43.9
0.670
60.8
4.76
16
0.907
42.9
5.61 0.524
88.0
18.49 0.119
51.4
0.704
51.6
4.29
17
0.893
32.2
6.80 0.457
99.8
18.42 0.120
58.7
0.747
43.7
2.90
18
0.925
20.7
8.38 0.381
107.2
18.86 0.114
66.3
0.717
35.8
2.20
Freq
F
min
Γ
opt
Γ
opt
R
n/50
G
a
GHz
dB
Mag.
Ang.
dB
0.5
0.25
0.20
166.00
0.020
28.47
0.9
0.30
0.25
169.00
0.022
24.36
1
0.30
0.35
171.00
0.018
24.24
1.5
0.36
0.40
173.00
0.019
21.17
2
0.45
0.46
176.80
0.020
19.30
2.4
0.52
174.70
0.021
18.08
3
0.66
0.56
169.80
0.025
16.26
3.5
0.70
0.62
162.80
0.028
15.33
3.9
0.87
0.65
157.90
0.042
14.62
5
1.02
0.67
145.70
0.082
12.52
5.8
1.13
0.71
136.80
0.140
11.53
6
1.24
0.73
135.10
0.175
11.40
7
1.34
0.82
126.20
0.380
10.57
8
1.58
0.83
116.90
0.645
9.67
9
1.78
0.81
107.50
0.870
8.59
10
1.88
0.83
95.40
1.350
7.76
Typical Noise Parameters, V
DS = 3V, IDS = 135 mA
Figure 32. MSG/MAG & |S21|2(dB)
@ 3V, 135 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
0
5
10
15
20
MSG/MAG
&
|S21|
2 (dB)
S21
MAG
MSG
相關(guān)PDF資料
PDF描述
ATF-531P8-TR2 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-54143-BLK C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR1 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR2 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR1G C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-531P8-BLK 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-531P8-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-531P8-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF54143 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-54143 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343
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