參數(shù)資料
型號(hào)： ATF-531P8-BLK
元件分類(lèi)： 小信號(hào)晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝： 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8
文件頁(yè)數(shù)： 3/15頁(yè)
文件大?。?/td> 248K
代理商： ATF-531P8-BLK
11
Freq
F
min
Γ
opt
Γ
opt
R
n/50
G
a
GHz
dB
Mag.
Ang.
dB
0.5
0.45
0.20
154.00
0.037
28.85
0.9
0.48
0.32
160.00
0.032
25.13
1
0.50
0.35
166.00
0.030
24.43
1.5
0.55
0.40
170.00
0.030
21.26
2
0.65
0.46
177.40
0.030
19.38
2.4
0.70
0.49
175.10
0.032
17.90
3
0.77
0.55
168.90
0.031
16.33
3.5
0.84
0.58
162.60
0.037
15.23
3.9
0.90
0.62
158.20
0.043
14.60
5
1.06
0.66
145.80
0.085
12.66
5.8
1.20
0.69
137.30
0.140
11.60
6
1.19
0.69
135.40
0.150
11.38
7
1.40
0.77
126.50
0.320
10.55
8
1.52
0.81
117.90
0.550
9.84
9
1.75
0.82
107.50
0.890
9.05
10
1.88
0.85
95.60
1.530
8.29
Notes:
1. F
min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F
min is
calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
Typical Noise Parameters, V
DS = 5V, IDS = 135 mA
Figure 31. MSG/MAG & |S21|2(dB)
@ 5V, 135 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
0
5
10
15
20
MSG/MAG
&
|S21|
2 (dB)
S21
MAG
MSG
ATF-531P8 Typical Scattering Parameters, V
DS = 5V, IDS = 135 mA
Freq.
S
11
S
1
S
1
S
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.805
56.0
34.11 50.734
152.1
39.17 0.011
62.6
0.468
45.2
36.64
0.2
0.815
94.0
32.03 39.967
132.6
34.89 0.018
46.6
0.419
79.7
33.46
0.3
0.831
116.9
29.97 31.517
120.5
33.56 0.021
36.3
0.387
102.0
31.76
0.4
0.839
131.7
28.10 25.418
112.1
32.77 0.023
30.7
0.364
117.9
30.43
0.5
0.844
140.9
26.58 21.322
106.4
32.40 0.024
27.2
0.354
127.0
29.49
0.6
0.846
148.3
25.20 18.207
101.8
32.04 0.025
24.9
0.346
135.4
28.62
0.7
0.850
154.0
24.00 15.852
98.0
31.70 0.026
23.3
0.342
141.6
27.85
0.8
0.852
158.7
22.93 14.014
94.8
31.70 0.026
22.3
0.339
146.5
27.32
0.9
0.855
162.5
21.98 12.559
92.0
31.70 0.026
21.6
0.337
150.5
26.84
1
0.854
165.6
21.10 11.351
89.6
31.37 0.027
20.9
0.335
153.9
26.24
1.5
0.855
177.1
17.71 7.681
79.5
31.06 0.028
21.1
0.331
165.0
24.38
1.9
0.857
176.3
15.71 6.099
73.0
30.46 0.030
22.3
0.331
170.4
23.08
2
0.851
174.9
15.46 5.931
71.7
30.17 0.031
22.3
0.336
170.9
22.82
2.4
0.851
169.4
13.89 4.946
65.6
29.63 0.033
23.3
0.315
175.8
21.76
3
0.852
161.8
11.92 3.943
57.1
29.12 0.035
24.3
0.323
178.2
19.82
4
0.857
151.1
9.35
2.935
43.9
27.74 0.041
24.4
0.343
169.9
16.43
5
0.859
141.0
7.30
2.318
30.9
26.56 0.047
22.8
0.367
162.1
14.19
6
0.870
131.8
5.57
1.899
18.5
25.51 0.053
19.7
0.391
154.0
12.82
7
0.867
123.6
4.11
1.605
6.5
24.44 0.060
16.3
0.417
146.2
11.24
8
0.877
115.6
2.80
1.381
5.2
23.48 0.067
11.8
0.440
137.7
10.41
9
0.881
106.7
1.82
1.233
17.0
22.38 0.076
6.1
0.458
129.1
9.75
10
0.885
95.6
0.75
1.090
30.1
21.41 0.085
1.3
0.482
118.1
8.94
11
0.892
85.2
0.30 0.966
42.9
20.72 0.092
9.1
0.500
107.5
8.31
12
0.875
74.2
1.33 0.858
54.3
20.00 0.100
17.0
0.540
98.6
6.52
13
0.883
63.8
2.49 0.751
65.9
19.66 0.104
24.8
0.593
87.1
5.87
14
0.886
57.9
3.58 0.662
76.4
19.09 0.111
31.8
0.636
75.8
5.23
15
0.913
47.4
4.78 0.577
86.8
18.71 0.116
40.3
0.660
66.8
6.01
16
0.908
43.1
5.81 0.512
94.4
18.56 0.118
47.8
0.699
57.0
4.78
17
0.891
32.2
6.99 0.447
105.1
18.49 0.119
54.9
0.747
48.4
2.98
18
0.928
20.6
8.64 0.370
112.1
18.86 0.114
62.6
0.717
39.9
2.41
相關(guān)PDF資料
PDF描述
ATF-531P8-TR2 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-54143-BLK C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR1 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR2 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR1G C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-531P8-BLK 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-531P8-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-531P8-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF54143 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-54143 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343
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