參數(shù)資料
型號： ATF-531P8-BLK
元件分類： 小信號晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝： 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8
文件頁數(shù)： 15/15頁
文件大?。?/td> 248K
代理商： ATF-531P8-BLK
Freq
F
min
Γ
opt
Γ
opt
R
n/50
G
a
GHz
dB
Mag.
Ang.
dB
0.5
0.18
0.20
166.00
0.014
28.57
0.9
0.26
0.25
169.00
0.018
24.42
1
0.35
171.00
0.021
24.32
1.5
0.40
173.00
0.021
21.25
2
0.51
0.47
177.20
0.022
19.35
2.4
0.56
0.51
174.50
0.022
17.66
3
0.60
0.56
169.30
0.023
16.37
3.5
0.73
0.60
162.90
0.030
15.09
3.9
0.83
0.66
157.60
0.040
14.82
5
1.03
0.68
145.50
0.085
12.76
5.8
1.15
0.72
137.10
0.140
11.55
6
1.20
0.72
135.20
0.160
11.31
7
1.34
0.78
126.70
0.300
10.55
8
1.57
0.83
117.00
0.630
9.81
9
1.78
0.82
107.90
0.880
8.86
10
1.83
0.85
95.70
1.460
8.17
Notes:
1. F
min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F
min is
calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
Typical Noise Parameters, V
DS = 4V, IDS = 135 mA
Figure 29. MSG/MAG & |S21|2(dB)
@ 4V, 135 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
0
5
10
15
20
MSG/MAG
&
|S21|
2 (dB)
S21
MAG
MSG
ATF-531P8 Typical Scattering Parameters, V
DS = 4V, IDS = 135 mA
Freq.
S
11
S
1
S
1
S
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.812
56.4
34.07 50.547
151.8
38.42 0.012
62.6
0.449
49.1
36.25
0.2
0.820
94.6
31.95 39.582
132.2
34.89 0.018
45.8
0.425
85.0
33.42
0.3
0.834
117.3
29.87 31.147
120.2
33.15 0.022
36.5
0.397
108.1
31.51
0.4
0.842
132.4
27.99 25.104
111.8
32.40 0.024
30.5
0.385
123.7
30.20
0.5
0.846
141.4
26.46 21.036
106.3
32.04 0.025
27.0
0.379
132.5
29.25
0.6
0.849
148.7
25.08 17.954
101.6
31.70 0.026
24.8
0.375
140.4
28.39
0.7
0.853
154.4
23.88 15.628
97.9
31.70 0.026
23.2
0.372
146.4
27.79
0.8
0.853
159.0
22.80 13.809
94.8
31.37 0.027
22.4
0.372
151.0
27.09
0.9
0.855
162.7
21.85 12.376
92.0
31.37 0.027
21.7
0.371
154.9
26.61
1
0.857
166.0
20.97 11.186
89.6
31.37 0.027
21.2
0.369
157.9
26.17
1.5
0.857
177.3
17.58 7.568
79.7
30.75 0.029
21.4
0.366
168.7
24.17
1.9
0.857
176.2
15.57 6.007
73.3
30.17 0.031
21.7
0.366
174.2
22.87
2
0.853
174.7
15.34 5.847
72.0
29.90 0.032
22.5
0.347
174.8
22.62
2.4
0.852
169.2
13.77 4.879
66.0
29.37 0.034
23.0
0.351
179.7
21.57
3
0.853
161.7
11.80 3.889
57.6
28.64 0.037
24.1
0.358
174.2
20.22
4
0.857
150.8
9.24
2.896
44.6
27.54 0.042
23.9
0.375
165.7
16.28
5
0.861
140.9
7.18
2.285
31.8
26.38 0.048
22.2
0.396
157.8
14.11
6
0.866
131.6
5.45
1.873
19.7
25.19 0.055
18.6
0.417
149.6
12.50
7
0.867
123.5
4.02
1.589
7.9
24.29 0.061
15.1
0.440
141.8
11.10
8
0.875
115.1
2.72
1.367
3.8
23.22 0.069
10.4
0.459
133.4
10.16
9
0.877
106.9
1.76
1.224
15.3
22.16 0.078
4.8
0.474
124.8
9.40
10
0.884
95.6
0.71
1.085
28.2
21.31 0.086
2.6
0.496
114.1
8.69
11
0.889
85.3
0.34 0.962
41.0
20.63 0.093
10.7
0.511
103.7
7.93
12
0.872
73.9
1.33 0.858
51.7
19.91 0.101
18.3
0.548
95.1
6.24
13
0.878
63.6
2.48 0.752
64.0
19.58 0.105
26.2
0.600
84.0
5.55
14
0.886
57.6
3.57 0.663
73.7
19.02 0.112
33.3
0.640
73.1
5.05
15
0.902
47.2
4.66 0.585
84.8
18.79 0.115
42.0
0.663
64.4
4.93
16
0.902
43.7
5.56 0.527
91.3
18.49 0.119
49.2
0.698
54.7
4.37
17
0.895
32.1
6.99 0.447
101.9
18.49 0.119
56.7
0.746
46.5
2.93
18
0.932
20.6
8.75 0.365
109.6
18.94 0.113
63.9
0.716
38.2
2.36
相關PDF資料
PDF描述
ATF-531P8-TR2 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-54143-BLK C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR1 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR2 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR1G C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關代理商/技術參數(shù)
參數(shù)描述
ATF-531P8-BLK 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-531P8-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
ATF-531P8-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
ATF54143 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-54143 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343
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