參數(shù)資料
型號： ATF-531P8-BLK
元件分類： 小信號晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝： 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8
文件頁數(shù)： 2/15頁
文件大小： 248K
代理商： ATF-531P8-BLK
10
Freq
F
min
Γ
opt
Γ
opt
R
n/50
G
a
GHz
dB
Mag.
Ang.
dB
0.5
0.15
0.10
130.00
0.016
27.97
0.9
0.20
0.15
135.00
0.019
23.50
1
0.22
0.20
143.00
0.019
23.02
1.5
0.30
148.00
0.022
20.07
2
0.36
0.35
154.10
0.024
17.85
2.4
0.44
0.43
168.70
0.022
16.35
3
0.50
0.47
179.30
0.022
15.29
3.5
0.55
0.58
170.80
0.019
14.11
3.9
0.63
0.60
164.80
0.024
14.01
5
0.80
0.67
150.90
0.050
11.92
5.8
0.90
0.72
140.80
0.095
11.00
6
0.91
0.72
139.50
0.100
10.56
7
1.14
0.71
129.10
0.180
9.80
8
1.24
0.74
119.90
0.285
9.31
9
1.49
0.74
109.70
0.460
8.41
10
1.61
0.76
97.30
0.720
7.73
Notes:
1. F
min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F
min is
calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
Typical Noise Parameters, V
DS = 4V, IDS = 75 mA
Figure 30. MSG/MAG & |S21|2(dB)
@ 4V, 75 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
0
5
10
15
20
MSG/MAG
&
|S21|
2 (dB)
S21
MAG
MSG
ATF-531P8 Typical Scattering Parameters, V
DS = 4V, IDS = 75 mA
Freq.
S
11
S
1
S
1
S
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.930
51.3
33.70 48.399
152.3
37.08 0.014
63.6
0.524
45.7
35.39
0.2
0.889
88.3
31.65 38.230
132.6
32.77 0.023
46.8
0.467
80.7
32.21
0.3
0.876
111.6
29.58 30.121
120.6
31.37 0.027
36.1
0.436
103.2
30.48
0.4
0.867
127.3
27.71 24.294
112.2
30.75 0.029
29.5
0.415
119.1
29.23
0.5
0.862
137.0
26.18 20.379
106.6
30.46 0.030
25.9
0.405
128.4
28.32
0.6
0.858
144.7
24.81 17.405
101.9
30.17 0.031
23.1
0.397
136.8
27.49
0.7
0.857
151.0
23.62 15.165
98.2
29.90 0.032
21.1
0.392
143.2
26.76
0.8
0.856
156.0
22.54 13.404
95.0
29.90 0.032
19.9
0.390
148.2
26.22
0.9
0.854
160.0
21.59 12.005
92.2
29.63 0.033
18.3
0.387
152.3
25.61
1
0.857
163.5
20.72 10.859
89.8
29.63 0.033
18.2
0.384
155.6
25.17
1.5
0.853
175.7
17.33 7.351
79.8
29.12 0.035
16.3
0.380
167.2
23.22
1.9
0.853
177.6
15.33 5.839
73.3
28.87 0.036
16.5
0.379
173.2
22.10
2
0.848
176.2
15.09 5.681
72.0
28.64 0.037
16.7
0.360
173.8
21.86
2.4
0.846
170.3
13.52 4.742
66.0
28.18 0.039
17.0
0.363
179.0
20.85
3
0.848
162.4
11.55 3.780
57.5
27.74 0.041
17.0
0.369
174.6
19.65
4
0.850
151.6
8.98
2.813
44.3
26.94 0.045
16.7
0.385
165.7
16.29
5
0.853
141.4
6.93
2.220
31.5
25.85 0.051
15.4
0.405
157.5
13.90
6
0.861
132.3
5.22
1.824
19.4
25.04 0.056
12.9
0.426
149.2
12.31
7
0.861
123.8
3.78
1.546
7.5
24.01 0.063
9.8
0.447
141.3
10.85
8
0.868
115.6
2.50
1.334
4.3
23.22 0.069
5.5
0.467
132.8
9.85
9
0.873
107.1
1.51
1.190
15.9
22.16 0.078
0.4
0.481
124.1
9.15
10
0.875
95.8
0.50
1.059
28.8
21.41 0.085
6.6
0.501
113.3
8.19
11
0.881
85.6
0.57 0.937
41.2
20.63 0.093
13.8
0.515
102.9
7.40
12
0.871
74.2
1.56 0.836
52.5
20.00 0.100
21.4
0.553
94.5
6.12
13
0.873
63.7
2.65 0.737
63.9
19.66 0.104
28.8
0.604
83.4
5.28
14
0.885
57.0
3.80 0.646
74.0
19.17 0.110
36.3
0.644
72.5
4.89
15
0.891
47.0
4.72 0.581
85.2
18.79 0.115
43.7
0.666
63.7
4.38
16
0.912
43.7
5.76 0.515
93.5
18.56 0.118
51.7
0.700
54.2
5.43
17
0.895
32.2
7.15 0.439
102.3
18.49 0.119
58.5
0.748
46.0
2.90
18
0.933
21.2
8.66 0.369
110.5
19.02 0.112
65.8
0.718
37.8
2.74
相關(guān)PDF資料
PDF描述
ATF-531P8-TR2 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-54143-BLK C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR1 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR2 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR1G C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-531P8-BLK 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-531P8-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-531P8-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF54143 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-54143 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343
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