參數(shù)資料
型號(hào)： ATF-53189-BLK
元件分類： 小信號(hào)晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： LEAD FREE PACKAGE-3
文件頁數(shù)： 15/15頁
文件大?。?/td> 144K
代理商： ATF-53189-BLK
9
Notes:
1. F
min
values at 2 GHz and higher are based on measurements while the F
min
below 2 GHz have been extrapolated. The F
min
values are based on
a set of 16 noise gure measurements made at 16 dierent impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
ATF-53189 Typical Scattering and Noise Parameters at 25°C, V
DS = 4.0V, IDS = 180 mA
Freq.
S
11
S
21
S
12
S
22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.544
-133.2
31.0
35.531
110.9
-37.7
0.013
31.7
0.692
-163.7
34.4
0.2
0.704
-158.7
25.6
19.023
97.1
-37.1
0.014
25.2
0.738
-173.2
31.3
0.3
0.777
-169.4
22.2
12.872
90.4
-36.5
0.015
24.9
0.749
-177.6
29.3
0.4
0.813
-176.1
19.7
9.705
85.7
-35.9
0.016
26.3
0.752
179.3
27.8
0.5
0.856
178.5
17.7
7.687
84.4
-35.4
0.017
30.4
0.756
175.7
26.6
0.6
0.866
174.5
16.2
6.438
81.7
-34.9
0.018
32.6
0.755
173.5
25.5
0.7
0.872
170.9
14.9
5.582
79.2
-34.4
0.019
34.5
0.755
171.4
24.7
0.8
0.874
167.5
13.9
4.939
76.5
-33.6
0.021
35.9
0.753
169.4
23.7
0.9
0.876
164.1
12.9
4.433
73.8
-33.2
0.022
36.8
0.755
167.5
23.0
1.0
0.880
161.0
12.1
4.026
70.9
-32.4
0.024
37.1
0.753
165.6
22.2
1.5
0.881
150.2
9.3
2.910
59.6
-30.5
0.030
35.8
0.753
158.4
19.2
2.0
0.882
137.1
6.5
2.123
45.9
-28.6
0.037
31.0
0.752
150.1
16.0
2.5
0.879
124.9
4.3
1.647
33.4
-27.3
0.043
25.0
0.768
142.3
13.4
3.0
0.874
112.7
2.3
1.304
21.1
-26.6
0.047
18.3
0.766
135.5
11.5
3.5
0.882
99.5
0.5
1.062
11.3
-26.0
0.050
12.6
0.773
131.8
10.0
4.0
0.889
92.6
-0.7
0.921
1.5
-25.8
0.051
7.1
0.779
123.3
9.4
5.0
0.903
78.2
-3.5
0.669
-19.8
-25.2
0.055
-5.3
0.793
102.9
7.0
6.0
0.918
61.3
-5.8
0.515
-41.5
-25.7
0.052
-22.4
0.806
84.7
5.2
7.0
0.948
41.2
-8.2
0.389
-59.6
-26.0
0.050
-39.5
0.809
69.9
3.2
8.0
0.960
24.3
-10.2
0.308
-79.9
-26.7
0.046
-55.9
0.844
54.6
2.1
9.0
0.941
11.8
-12.4
0.239
-100.5
-28.4
0.038
-73.5
0.882
37.0
1.4
10.0
0.946
10.8
-14.6
0.187
-109.4
-31.1
0.028
-81.6
0.896
27.1
0.1
11.0
0.937
0.3
-16.0
0.158
-124.9
-34.4
0.019
-108.3
0.872
20.3
-1.8
12.0
0.914
-8.0
-17.7
0.131
-138.0
-46.0
0.005
-147.3
0.916
7.0
-1.3
13.0
0.951
-12.1
-19.2
0.110
-153.4
-40.0
0.010
71.0
0.877
-1.1
-4.4
14.0
0.948
-20.6
-21.0
0.089
-168.9
-37.1
0.014
30.2
0.882
-7.5
-6.3
15.0
0.939
-23.6
-21.4
0.085
177.8
-39.2
0.011
-4.9
0.865
-19.2
-7.2
16.0
0.948
-23.1
-21.1
0.088
165.9
-37.7
0.013
-8.8
0.864
-26.2
-6.9
17.0
0.947
-24.3
-18.9
0.114
155.2
-41.9
0.008
-173.5
0.856
-33.6
-4.7
18.0
0.903
-32.5
-17.1
0.140
133.4
-35.4
0.017
161.7
0.835
-42.5
-3.2
Figure 36. MSG/MAG & |S21|2 vs. and
Frequency at 4.0V/180 mA.
FREQUENCY (GHz)
MSG/MAG
&
|S21|
2 (dB)
018
2
4
6
8
10
12
14
16
40
30
20
10
0
-10
-20
MSG
MAG
S21
Freq
GHz
Fmin
dB
Gamma Opt
Rn/50
Ga
dB
Mag
Ang
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.65
0.76
0.79
0.86
0.94
1.00
1.10
1.17
1.41
1.53
1.56
1.72
1.87
2.03
2.18
0.394
0.417
0.423
0.465
0.509
0.545
0.600
0.645
0.777
0.840
0.855
0.920
0.970
0.993
0.997
163.6
172.4
175.3
-165.4
-147.7
-134.6
-116.7
-103.3
-70.0
-56.1
-52.9
-39.0
-27.5
-19.1
-7.5
0.11
0.09
0.08
0.06
0.08
0.16
0.28
0.35
0.41
0.42
0.51
0.97
1.88
2.54
25.82
21.83
21.71
18.70
17.63
16.45
14.90
13.53
11.35
10.31
10.38
9.79
7.91
6.11
4.56
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-53189-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-53189-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-531P8 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK
ATF-531P8-BLK 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-531P8-BLK 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
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