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參數(shù)資料
| 型號(hào)： | ATF-53189-BLK |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 11/15頁(yè) |
| 文件大?。?/td> | 144K |
| 代理商： | ATF-53189-BLK |
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ATF-53189 Typical Performance Curves (at 25°C unless specied otherwise)
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA.
Figure 7. OIP3 vs. Ids and Vds at 900 MHz.
Ids (mA)
OIP3
(dBm)
75
180
90
105
120
135
150
165
45
40
35
30
25
20
3V
4V
5V
Figure 8. OIP3 vs. Ids and Vds at 2 GHz.
Ids (mA)
OIP3
(dBm)
75
180
90
105
120
135
150
165
45
40
35
30
25
20
3V
4V
5V
Figure 9. OIP3 vs. Ids and Vds at 3.9 GHz.
Ids (mA)
OIP3
(dBm)
75
180
90
105
120
135
150
165
45
40
35
30
25
20
3V
4V
5V
Figure 10. Small Signal Gain vs. Ids and Vds
at 900 MHz.
Ids (mA)
GAIN
(dB)
75
180
90
105
120
135
150
165
19
18
17
16
15
14
13
12
3V
4V
5V
Figure 11. Small Signal Gain vs. Ids and Vds
at 2 GHz.
Ids (mA)
GAIN
(dB)
75
180
90
105
120
135
150
165
19
18
17
16
15
14
13
12
3V
4V
5V
Figure 12. Small Signal Gain vs. Ids and Vds
at 3.9 GHz.
Ids (mA)
GAIN
(dB)
75
180
90
105
120
135
150
165
14
12
10
8
6
4
2
0
3V
4V
5V
Figure 13. OIP3 vs. Ids and Vds at 5.8 GHz.
Ids (mA)
OIP3
(dBm)
75
180
90
105
120
135
150
165
40
35
30
25
20
3V
4V
5V
Figure 14. Small Signal Gain vs. Ids and Vds
at 5.8 GHz.
Ids (mA)
GAIN
(dB)
75
180
90
105
120
135
150
165
8
6
4
2
0
3V
4V
5V
Figure 15. Small Signal Gain/Pout/PAE vs.
Pin at Vds=3V and Freq = 900 MHz.
Pin (dBm)
GAIN
(dB)
&
Pout
(dBm)
PAE
(%)
-14
10
-10
-6
-2
2
6
30
25
20
15
10
5
0
60
50
40
30
20
10
0
Gain_3V
Pout_3V
PAE_3V
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
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PDF描述 |
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| ATF-531P8-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-53189-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-53189-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-531P8 | 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK |
| ATF-531P8-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-531P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
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