參數(shù)資料
型號(hào)： ATF-521P8-TR1G
廠商： AGILENT TECHNOLOGIES INC
元件分類： 小信號(hào)晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝： 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
文件頁數(shù)： 5/24頁
文件大?。?/td> 248K
代理商： ATF-521P8-TR1G
13
ATF-521P8 Typical Scattering Parameters, VDS = 3V, IDS = 200 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.867
-94.6
33.7
48.20
132.4
-36.8
0.014
45.1
0.482
-132.4
35.4
0.2
0.894
-132.9
29.4
29.66
113.2
-34.9
0.018
28.5
0.601
-154.2
32.2
0.3
0.899
-148.2
26.5
21.06
104.4
-34.1
0.020
23.2
0.636
-163.8
30.2
0.4
0.896
-157.2
24.1
16.00
99.1
-34.0
0.020
23.7
0.647
-169.2
29.0
0.5
0.892
-162.8
22.4
13.20
95.6
-33.6
0.021
24.5
0.650
-171.9
28.0
0.6
0.910
-167.4
20.8
11.00
92.3
-33.2
0.022
22.9
0.655
-174.4
27.0
0.7
0.906
-170.8
19.6
9.51
90.2
-33.2
0.022
23.9
0.657
-176.7
26.4
0.8
0.902
-173.6
18.4
8.35
87.8
-33.0
0.022
24.6
0.658
-178.2
25.8
0.9
0.907
-175.2
17.5
7.51
86.3
-32.9
0.023
27.0
0.660
-179.5
25.1
1
0.902
-177.7
16.6
6.76
84.2
-32.5
0.024
26.9
0.659
178.6
24.5
1.5
0.900
174.2
13.1
4.50
76.4
-31.5
0.027
32.7
0.656
173.4
22.2
2
0.896
168.1
10.8
3.49
69.1
-29.9
0.032
32.9
0.647
167.9
20.4
2.5
0.896
162.3
9.0
2.82
63.0
-29.0
0.036
34.3
0.642
163.7
18.6
3
0.887
156.7
7.4
2.35
56.9
-27.7
0.041
35.0
0.643
159.2
15.6
4
0.890
145.7
4.9
1.76
43.8
-26.1
0.050
32.2
0.645
150.4
12.9
5
0.898
136.3
3.0
1.41
32.1
-24.5
0.059
28.3
0.659
142.1
11.3
6
0.896
127.4
1.3
1.16
21.6
-23.4
0.068
23.5
0.671
134.3
9.5
7
0.904
119.4
-0.2
0.98
10.3
-22.1
0.078
17.7
0.677
126.6
8.5
8
0.877
104.9
-1.6
0.83
-2.3
-20.7
0.092
9.0
0.651
117.0
5.9
9
0.883
94.8
-2.4
0.76
-13.0
-19.8
0.102
1.3
0.661
107.2
5.3
10
0.877
83.1
-3.5
0.67
-26.0
-18.9
0.113
-7.3
0.657
96.8
4.0
11
0.875
71.7
-4.4
0.60
-36.3
-18.3
0.121
-16.6
0.670
86.7
3.1
12
0.863
60.6
-5.4
0.54
-47.4
-17.8
0.128
-25.1
0.680
76.2
1.9
13
0.910
51.6
-6.5
0.47
-57.9
-17.6
0.132
-33.6
0.694
65.9
2.3
14
0.868
40.9
-7.5
0.42
-62.8
-17.2
0.138
-40.4
0.721
59.3
0.2
15
0.863
33.4
-8.1
0.39
-74.7
-16.8
0.144
-47.6
0.748
51.3
-0.2
16
0.835
25.2
-9.6
0.33
-78.2
-16.3
0.154
-56.8
0.758
44.9
-2.1
17
0.720
11.2
-9.5
0.33
-90.8
-15.8
0.161
-67.6
0.818
39.4
-2.6
18
0.780
-7.7
-11.6
0.26
-92.8
-17.0
0.142
-85.1
0.655
37.1
-5.7
Freq
Fmin
Γopt
Rn
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.66
0.22
147.00
2.9
20.0
1.0
0.72
0.30
160.00
2.6
18.3
2.0
0.87
0.42
-179.94
1.9
16.0
3.0
1.00
0.59
-163.63
1.6
13.7
4.0
1.32
0.63
-153.81
3.7
11.3
5.0
1.49
0.72
-135.10
10.0
9.9
6.0
1.59
0.74
-128.97
15.0
8.5
7.0
1.79
0.78
-117.68
25.1
7.6
8.0
1.96
0.70
-110.04
29.2
5.6
Typical Noise Parameters, VDS = 3V, IDS = 200 mA
Figure 44. MSG/MAG and |S21|
2 vs.
Frequency at 3V, 200 mA.
MAG
S21
FREQUENCY (GHz)
MSG/MAG
and
|S
21
|
2 (dB)
020
10
515
40.0
30.0
20.0
10.0
0.0
-10.0
-20.0
MSG
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
相關(guān)PDF資料
PDF描述
ATF-521P8-BLKG C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-TR2 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-TR1 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-BLK L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-53189-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-521P8-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF524S16M 制造商:n/a 功能描述:Inverter Semiconductor
ATF-53189 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Enhancement Mode Pseudomorphic HEMT in SOT 89 Package
ATF-53189-BLK 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-53189-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
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