參數(shù)資料
型號： ATF-501P8-TR2G
廠商： AGILENT TECHNOLOGIES INC
元件分類： 小信號晶體管
英文描述： S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝： 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, LPCC-8
文件頁數(shù)： 5/22頁
文件大?。?/td> 184K
代理商： ATF-501P8-TR2G
13
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
ATF-501P8 Typical Scattering Parameters,
VDS = 4.5V, IDS = 360 mA
Freq.
S11
S21
S12
S22
MSG/MAG K
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
factor
0.1
0.911
-132.8
31.6
38.110
112.4
-39.2
0.011
30.3
0.649
-162.1
35.4
0.200
0.2
0.910
-156.5
26.2
20.415
100.0
-38.4
0.012
24.9
0.692
-171.8
32.3
0.340
0.3
0.911
-165.8
22.8
13.848
94.6
-37.7
0.013
26.2
0.701
-176.2
30.3
0.472
0.4
0.913
-171.1
20.3
10.397
91.3
-37.7
0.013
28.9
0.704
-178.9
29.0
0.600
0.5
0.907
-173.7
18.7
8.640
88.5
-36.5
0.015
31.8
0.693
179.7
27.6
0.679
0.6
0.910
-176.3
17.2
7.232
86.2
-35.9
0.016
34.5
0.694
178.2
26.6
0.747
0.7
0.910
-178.6
15.8
6.200
84.2
-35.9
0.016
36.8
0.696
176.9
25.9
0.838
0.8
0.906
179.7
14.7
5.431
82.2
-35.4
0.017
38.8
0.697
175.6
25.0
0.914
0.9
0.913
178.0
13.7
4.826
80.3
-34.9
0.018
40.6
0.695
174.8
24.3
0.930
1
0.907
176.4
12.7
4.328
78.4
-34.0
0.020
42.3
0.694
173.7
23.4
0.984
1.5
0.904
170.3
9.2
2.878
70.4
-32.0
0.025
47.0
0.698
169.4
18.2
1.154
2
0.906
165.9
7.1
2.275
64.5
-30.5
0.030
48.7
0.702
165.5
16.1
1.193
2.5
0.904
164.8
6.6
2.146
63.2
-30.2
0.031
49.0
0.701
162.8
15.5
1.231
3
0.907
160.9
5.0
1.783
57.9
-28.9
0.036
49.0
0.699
159.0
14.0
1.246
4
0.906
154.7
3.1
1.424
49.4
-27.3
0.043
47.7
0.708
153.6
12.0
1.275
5
0.903
144.8
0.9
1.114
37.7
-24.7
0.058
44.2
0.701
146.7
9.7
1.268
6
0.896
134.7
-0.8
0.907
22.7
-22.7
0.073
36.2
0.699
145.1
7.9
1.256
7
0.903
125.6
-3.2
0.691
8.9
-22.2
0.078
27.9
0.654
134.0
5.9
1.355
8
0.903
115.0
-4.3
0.612
-1.0
-20.7
0.092
22.4
0.647
117.3
4.6
1.375
9
0.891
105.6
-5.3
0.544
-13.3
-19.5
0.106
12.8
0.642
115.4
2.9
1.495
10
0.885
94.9
-6.0
0.504
-20.0
-18.8
0.115
10.2
0.697
104.4
2.4
1.462
11
0.873
84.3
-6.7
0.465
-28.4
-17.5
0.133
0.9
0.743
91.3
1.6
1.416
12
0.866
74.0
-7.9
0.403
-41.1
-17.3
0.137
-5.8
0.735
87.9
0.1
1.607
13
0.849
64.3
-7.8
0.406
-47.3
-15.9
0.161
-12.1
0.768
78.3
0.0
1.464
14
0.849
55.7
-8.4
0.379
-57.9
-15.2
0.174
-21.3
0.801
68.8
-0.2
1.361
15
0.841
46.6
-9.0
0.353
-69.0
-14.5
0.189
-30.3
0.800
65.5
-0.9
1.376
16
0.828
39.0
-9.4
0.337
-73.1
-14.2
0.196
-37.1
0.763
51.4
-2.0
1.547
17
0.817
31.0
-9.8
0.322
-83.0
-13.2
0.218
-45.1
0.787
38.7
-2.4
1.491
18
0.809
23.9
-10.3
0.304
-92.7
-12.4
0.240
-52.4
0.783
29.3
-3.2
1.513
Figure 58. MSG/MAG & |S21|
2 vs. Frequency
at 4.5V 360mA.
FREQUENCY (GHz)
MSG/MAG
&
|S21|
2 (dB)
018
2
4
6
8
10
12
14
16
40
30
20
10
0
-10
-20
S21
MSG
MAG
相關(guān)PDF資料
PDF描述
ATF-501P8-TR2 S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-BLK S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-TR2 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-BLK L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-TR1 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-511P8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Single Voltage E-pHEMT Low Noise +41.7 dBm OIP3 in LPCC
ATF-511P8-BLK 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-511P8-BLK 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-511P8-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-511P8-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
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