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參數(shù)資料
| 型號： | ATF-501P8-BLK |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封裝： | 2 x 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8 |
| 文件頁數(shù)： | 1/22頁 |
| 文件大小： | 786K |
| 代理商： | ATF-501P8-BLK |
ATF-501P8
High Linearity Enhancement Mode[1] Pseudomorphic HEMT
in 2x2 mm2 LPCC[3] Package
Data Sheet
Description
Avago Technologies’s ATF-501P8 is a single-voltage high
linearity, low noise E-pHEMT housed in an 8-lead JEDEC-
standard leadless plastic chip carrier (LPCC[3]) package.
The device is ideal as a medium-power amplifier. Its
operating frequency range is from 400 MHz to 3.9 GHz.
The thermally efficient package measures only 2mm
x 2mm x 0.75mm. Its backside metalization provides
excellent thermal dissipation as well as visual evidence
of solder reflow. The device has a Point MTTF of over 300
years at a mounting temperature of +85C. All devices
are 100% RF & DC tested.
Features
Single voltage operation
High Linearity and P1dB
Low Noise Figure
Excellent uniformity in product specifications
Small package size: 2.0 x 2.0 x 0.75 mm3
Point MTTF > 300 years[2]
MSL-1 and lead-free
Tape-and-Reel packaging option available
Specifications
2 GHz; 4.5V, 280 mA (Typ.)
45.5 dBm Output IP3
29 dBm Output Power at 1dB gain compression
1 dB Noise Figure
15 dB Gain
14.5 dB LFOM[4]
65% PAE
23oC/W thermal resistance
Applications
Front-end LNA Q2 and Q3, Driver or Pre-driver
Amplifier for Cellular/PCS and WCDMA wireless
infrastructure
Driver Amplifier for WLAN, WLL/RLL and MMDS
applications
General purpose discrete E-pHEMT for other high
linearity applications
Pin Connections and Package Marking
Note:
Package marking provides orientation and identification:
“0P” = Device Code
“x” = Date code indicates the month of manufacture.
Notes:
1. Enhancement mode technology employs a single positive Vgs,
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Conforms to JEDEC reference outline MO229 for DRP-N.
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias
power.
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
0Px
Top View
Pin 8
Source
(Thermal/RF
Gnd)
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1C)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-501P8-TR1 | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-511P8-BLKG | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-TR2G | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-BLK | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-TR1 | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-501P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-501P8-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-501P8-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-511P8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Single Voltage E-pHEMT Low Noise +41.7 dBm OIP3 in LPCC |
| ATF-511P8-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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