
19
SAM7S Series [DATASHEET]
6175M–ATARM–26-Oct-12
Fast access time, 30 MHz single-cycle access in Worst Case conditions
Page programming time: 6 ms, including page auto-erase
Page programming without auto-erase: 3 ms
Full chip erase time: 15 ms
10,000 write cycles, 10-year data retention capability
16 lock bits, protecting 16 sectors of 32 pages
Protection Mode to secure contents of the Flash
16 Kbytes of Fast SRAM
Single-cycle access at full speed
8.5
SAM7S321/32
32 Kbytes of Flash Memory, single plane
256 pages of 128 bytes
Fast access time, 30 MHz single-cycle access in Worst Case conditions
Page programming time: 6 ms, including page auto-erase
Page programming without auto-erase: 3 ms
Full chip erase time: 15 ms
10,000 write cycles, 10-year data retention capability
8 lock bits, protecting 8 sectors of 32 pages
Protection Mode to secure contents of the Flash
8 Kbytes of Fast SRAM
Single-cycle access at full speed
8.6
SAM7S161/16
16 Kbytes of Flash Memory, single plane
256 pages of 64 bytes
Fast access time, 30 MHz single-cycle access in Worst Case conditions
Page programming time: 6 ms, including page auto-erase
Page programming without auto-erase: 3 ms
Full chip erase time: 15 ms
10,000 write cycles, 10-year data retention capability
8 lock bits, protecting 8 sectors of 32 pages
Protection Mode to secure contents of the Flash
4 Kbytes of Fast SRAM
Single-cycle access at full speed