CC, the EEPROM data can be c" />
參數(shù)資料
型號: AT90S4433-8AC
廠商: Atmel
文件頁數(shù): 69/126頁
文件大?。?/td> 0K
描述: IC MCU 4K FLSH 8MHZ A/D 32TQFP
標(biāo)準(zhǔn)包裝: 250
系列: AVR® 90S
核心處理器: AVR
芯體尺寸: 8-位
速度: 8MHz
連通性: SPI,UART/USART
外圍設(shè)備: 欠壓檢測/復(fù)位,POR,PWM,WDT
輸入/輸出數(shù): 20
程序存儲器容量: 4KB(2K x 16)
程序存儲器類型: 閃存
EEPROM 大?。?/td> 256 x 8
RAM 容量: 128 x 8
電壓 - 電源 (Vcc/Vdd): 4 V ~ 6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 6x10b
振蕩器型: 外部
工作溫度: 0°C ~ 70°C
封裝/外殼: 32-TQFP
包裝: 托盤
47
AT90S/LS4433
1042H–AVR–04/03
Prevent EEPROM
Corruption
During periods of low V
CC, the EEPROM data can be corrupted because the supply volt-
age is too low for the CPU and the EEPROM to operate properly. These issues are the
same as for board-level systems using the EEPROM, and the same design solutions
should be applied.
An EEPROM data corruption can be caused by two situations when the voltage is too
low. First, a regular write sequence to the EEPROM requires a minimum voltage to
operate correctly. Second, the CPU itself can execute instructions incorrectly if the sup-
ply voltage for executing instructions is too low.
EEPROM data corruption can easily be avoided by following these design recommen-
dations (one is sufficient):
1.
Keep the AVR RESET active (low) during periods of insufficient power supply
voltage. This can be done by enabling the internal Brown-out Detector (BOD) if
the operating speed matches the detection level. If not, an external low V
CC
Reset Protection circuit can be applied.
2.
Keep the AVR core in Power-down sleep mode during periods of low V
CC. This
will prevent the CPU from attempting to decode and execute instructions, effec-
tively protecting the EEPROM Registers from unintentional writes.
3.
Store constants in Flash memory if the ability to change memory contents from
software is not required. Flash memory cannot be updated by the CPU and will
not be subject to corruption.
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