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參數(shù)資料
| 型號(hào)： | AT45DB011D-MU |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 1-megabit 2.7-volt DataFlash |
| 中文描述： | 1M X 1 FLASH 2.7V PROM, DSO8 |
| 封裝： | 6 X 5 MM, 1 MM HEIGHT, GREEN, MLF-8 |
| 文件頁(yè)數(shù)： | 37/52頁(yè) |
| 文件大?。?/td> | 1107K |
| 代理商： | AT45DB011D-MU |
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37
3639B–DFLASH–02/07
AT45DB011D [Preliminary]
21.5
Utilizing the RapidS Function
To take advantage of the RapidS function's ability to operate at higher clock frequencies, a full
clock cycle must be used to transmit data back and forth across the serial bus. The DataFlash is
designed to always clock its data out on the falling edge of the SCK signal and clock data in on
the rising edge of SCK.
For full clock cycle operation to be achieved, when the DataFlash is clocking data out on the
falling edge of SCK, the host controller should wait until the next falling edge of SCK to latch the
data in. Similarly, the host controller should clock its data out on the rising edge of SCK in
order to give the DataFlash a full clock cycle to latch the incoming data in on the next rising edge
of SCK.
Figure 21-1.
RapidS Mode
SCK
MOSI
MISO
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
MOSI = Master O
u
t, Sla
v
e In
MISO = Master In, Sla
v
e O
u
t
The Master is the host controller and the Sla
v
e is the DataFlash
The Master al
w
ays clocks data o
u
t on the rising edge of SCK and al
w
ays clocks data in on the falling edge of SCK.
The Sla
v
e al
w
ays clocks data o
u
t on the falling edge of SCK and al
w
ays clocks data in on the rising edge of SCK.
A. Master clocks o
u
t first
b
it of BYTE-MOSI on the rising edge of SCK.
B. Sla
v
e clocks in first
b
it of BYTE-MOSI on the next rising edge of SCK.
C. Master clocks o
u
t second
b
it of BYTE-MOSI on the same rising edge of SCK.
D. Last
b
it of BYTE-MOSI is clocked o
u
t from the Master.
E. Last
b
it of BYTE-MOSI is clocked into the sla
v
e.
F.
Sla
v
e clocks o
u
t first
b
it of BYTE-SO.
G. Master clocks in first
b
it of BYTE-SO.
H. Sla
v
e clocks o
u
t second
b
it of BYTE-SO.
I.
Master clocks in last
b
it of BYTE-SO.
A
B
C
D
E
F
G
1
H
BYTE-MOSI
MSB
LSB
BYTE-SO
MSB
LSB
Sla
v
e
CS
I
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT45DB011D-SSU | 1-megabit 2.7-volt DataFlash |
| AT45DB011D-SU | 1-megabit 2.7-volt DataFlash |
| AT45DB011 | 1-megabit 2.7-volt Only Serial DataFlash(1M位 2.7V串行數(shù)據(jù)閃速存儲(chǔ)器) |
| AT45DB021B-CU | 2-megabit 2.7-volt Only DataFlash |
| AT45DB021B-RU | 2-megabit 2.7-volt Only DataFlash |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT45DB011D-SH | 制造商:Atmel Corporation 功能描述:DATAFLASH SERIAL 20MHZ 1MB 45DB011 |
| AT45DB011D-SH SL954 | 制造商:Adesto Technologies Corporation 功能描述:IC FLASH 1MBIT 66MHZ 8SOIC |
| AT45DB011D-SH-B | 功能描述:閃存 1M 2.7-3.6V, 66Mhz Serial 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT45DB011D-SHET-T | 制造商:Adesto Technologies Corporation 功能描述:8-SOIC-W, IND TEMP, 2.7V, T&R - Tape and Reel |
| AT45DB011D-SHGK-T | 制造商:Adesto Technologies Corporation 功能描述:8-SOIC-W, IND TEMP, 2.7V, T&R - Tape and Reel |
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