參數(shù)資料
型號(hào)： AT45DB011D-MU
廠商： ATMEL CORP
元件分類： DRAM
英文描述： 1-megabit 2.7-volt DataFlash
中文描述： 1M X 1 FLASH 2.7V PROM, DSO8
封裝： 6 X 5 MM, 1 MM HEIGHT, GREEN, MLF-8
文件頁(yè)數(shù)： 11/52頁(yè)
文件大小： 1107K
代理商： AT45DB011D-MU
11
3639B–DFLASH–02/07
AT45DB011D [Preliminary]
7.8
Main Memory Page Program Through Buffer
This operation is a combination of the Buffer Write and Buffer to Main Memory Page Program
with Built-in Erase operations. Data is first clocked into the buffer from the input pin (SI) and then
programmed into a specified page in the main memory. To perform a main memory page pro-
gram through buffer for the DataFlash standard page size (264 bytes), a 1-byte opcode, 82H,
must first be clocked into the device, followed by three address bytes. The address bytes are
comprised of 6 don’t care bits, 9 page address bits, (PA8 - PA0) that select the page in the main
memory where data is to be written, and 9 buffer address bits (BFA8 - BFA0) that select the first
byte in the buffer to be written. To perform a main memory page program through buffer for the
binary page size (256 bytes), the opcode 82H must be clocked into the device followed by three
address bytes consisting of 7 don’t care bits, 9 page address bits (A16 - A8) that specify the
page in the main memory to be written, and 8 buffer address bits (BFA7 - BFA0) that selects the
first byte in the buffer to be written. After all address bytes are clocked in, the part will take data
from the input pins and store it in the specified data buffer. If the end of the buffer is reached, the
device will wrap around back to the beginning of the buffer. When there is a low-to-high transi-
tion on the CS pin, the part will first erase the selected page in main memory to all 1s and then
program the data stored in the buffer into that memory page. Both the erase and the program-
ming of the page are internally self-timed and should take place in a maximum time of t
EP
.
During this time, the status register will indicate that the part is busy.
8.
Sector Protection
Two protection methods, hardware and software controlled, are provided for protection against
inadvertent or erroneous program and erase cycles. The software controlled method relies on
the use of software commands to enable and disable sector protection while the hardware con-
trolled method employs the use of the Write Protect (WP) pin. The selection of which sectors
that are to be protected or unprotected against program and erase operations is specified in the
nonvolatile Sector Protection Register. The status of whether or not sector protection has been
enabled or disabled by either the software or the hardware controlled methods can be deter-
mined by checking the Status Register.
相關(guān)PDF資料
PDF描述
AT45DB011D-SSU 1-megabit 2.7-volt DataFlash
AT45DB011D-SU 1-megabit 2.7-volt DataFlash
AT45DB011 1-megabit 2.7-volt Only Serial DataFlash(1M位 2.7V串行數(shù)據(jù)閃速存儲(chǔ)器)
AT45DB021B-CU 2-megabit 2.7-volt Only DataFlash
AT45DB021B-RU 2-megabit 2.7-volt Only DataFlash
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AT45DB011D-SH 制造商:Atmel Corporation 功能描述:DATAFLASH SERIAL 20MHZ 1MB 45DB011
AT45DB011D-SH SL954 制造商:Adesto Technologies Corporation 功能描述:IC FLASH 1MBIT 66MHZ 8SOIC
AT45DB011D-SH-B 功能描述:閃存 1M 2.7-3.6V, 66Mhz Serial 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AT45DB011D-SHET-T 制造商:Adesto Technologies Corporation 功能描述:8-SOIC-W, IND TEMP, 2.7V, T&R - Tape and Reel
AT45DB011D-SHGK-T 制造商:Adesto Technologies Corporation 功能描述:8-SOIC-W, IND TEMP, 2.7V, T&R - Tape and Reel
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