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參數(shù)資料
| 型號： | AT45BR3214B |
| 廠商： | Atmel Corp. |
| 英文描述： | 32-MEGABIT DATAFLASH + 4-MEGABIT SRAM STACK MEMORY |
| 中文描述： | 32-MEGABIT的DataFlash 4兆位的SRAM堆棧內(nèi)存 |
| 文件頁數(shù)： | 14/40頁 |
| 文件大?。?/td> | 488K |
| 代理商： | AT45BR3214B |
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14
AT45BR3214B
3356B–DFLASH–10/04
Note:
1. After power is applied and V
CC
is at the minimum specified datasheet value, the system should wait 20 ms before an opera-
tional mode is started.
Note:
1. I
cc1
during a buffer read is 20mA maximum.
Absolute Maximum Ratings*
Temperature under Bias ................................ -55
°
C to +125
°
C
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Storage Temperature..................................... -65
°
C to +150
°
C
All Input Voltages
(including NC Pins)
with Respect to Ground...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground.............................-0.6V to V
CC
+ 0.6V
DC and AC Operating Range
32-Mbit DataFlash
Operating Temperature (Case)
Com.
0
°
C to 70
°
C
Ind.
-40
°
C to 85
°
C
V
CC
Power Supply
(1)
2.7V to 3.3V
DC Characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Units
I
SB
Standby Current
CS, RESET, WP = V
CC
, all inputs
at CMOS levels
2
10
μA
I
CC1
(1)
Active Current, Read
Operation
f = 20 MHz; I
OUT
= 0 mA;
V
CC
= 3.3V
4
10
mA
I
CC2
Active Current,
Program/Erase Operation
V
CC
= 3.3V
15
35
mA
I
LI
Input Load Current
V
IN
= CMOS levels
1
μA
I
LO
Output Leakage Current
V
I/O
= CMOS levels
1
μA
V
IL
Input Low Voltage
0.6
V
V
IH
Input High Voltage
2.0
V
V
OL
Output Low Voltage
I
OL
= 1.6 mA; V
CC
= 2.7V
0.4
V
V
OH
Output High Voltage
I
OH
= -100 μA
V
CC
- 0.2V
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT45BR3214B-C1 | 32-MEGABIT DATAFLASH + 4-MEGABIT SRAM STACK MEMORY |
| AT45CS1282 | 128-megabit 2.7-volt Dual-interface Code Shadow DataFlash |
| AT45D011 | 1-Megabit 5.0-volt Only Serial DataFlash |
| AT45D011-JC | 1-Megabit 5.0-volt Only Serial DataFlash |
| AT45D011-JI | 1-Megabit 5.0-volt Only Serial DataFlash |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT45BR3214B-C1 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:32-MEGABIT DATAFLASH + 4-MEGABIT SRAM STACK MEMORY |
| AT45CS1282 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:128-megabit 2.7-volt Dual-interface Code Shadow DataFlash |
| AT45CS1282-TC | 功能描述:閃存 128M bit RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT45CS1282-TI | 功能描述:IC FLASH 128MBIT 50MHZ 40TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| AT45D011 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:1-Megabit 5.0-volt Only Serial DataFlash |
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