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參數(shù)資料
| 型號： | AT29BV020 |
| 廠商： | Atmel Corp. |
| 英文描述： | 256K x 8 Single 2.7-volt Battery-Voltage Flash Memory(256K x 8單電源2.7V Battery-Voltage技術(shù)閃速存儲器) |
| 中文描述： | 256K × 8單2.7伏電池電壓快閃記憶體（256K × 8單電源為2.7V電池電壓技術(shù)閃速存儲器） |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 139K |
| 代理商： | AT29BV020 |
AT29BV020
3
PRODUCT IDENTIFICATION:
mode identifies the device and manufacturer as Atmel. It
may be accessed by hardware or software operation. The
hardware operation mode can be used by an external pro-
grammer to identify the correct programming algorithm for
the Atmel product. In addition, users may wish to use the
software product identification mode to identify the part (i.e.
using the device code), and have the system software use
the appropriate sector size for program operations. In this
manner, the user can have a common board design for
256K to 4-megabit densities and, with each density’s sector
size in a memory map, have the system software apply the
appropriate sector size.
For details, see Operating Modes (for hardware operation)
or Software Product Identification. The manufacturer and
device code is the same for both methods of identification.
DATA POLLING:
The AT29BV020 features DATA polling
to indicate the end of a program cycle. During a program
cycle an attempted read of the last byte loaded will result in
the complement of the loaded data on I/O7. Once the pro-
gram cycle has been completed, true data is valid on all
outputs and the next cycle may begin. DATA polling may
begin at any time during the program cycle.
TOGGLE BIT:
In addition to DATA polling the
AT29BV020 provides another method for determining the
end of a program or erase cycle. During a program or erase
operation, successive attempts to read data from the
device will result in I/O6 toggling between one and zero.
Once the program cycle has completed, I/O6 will stop tog-
gling and valid data will be read. Examining the toggle bit
may begin at any time during a program cycle.
OPTIONAL CHIP ERASE MODES:
may be erased by using a 6-byte software code. Please
see Software Chip Erase application note for details.
BOOT BLOCK PROGRAMMING LOCKOUT:
AT29BV020 has two designated memory blocks that have
The product identification
The entire device
The
a programming lockout feature. This feature prevents pro-
gramming of data in the designated block once the feature
has been enabled. Each of these blocks consists of 8K
bytes; the programming lockout feature can be set inde-
pendently for either block. While the lockout feature does
not have to be activated, it can be activated for either or
both blocks.
These two 8K memory sections are referred to as boot
blocks. Secure code which will bring up a system can be
contained in a boot block. The AT29BV020 blocks are
located in the first 8K bytes of memory and the last 8K
bytes of memory. The boot block programming lockout fea-
ture can therefore support systems that boot from the lower
addresses of memory or the higher addresses. Once the
programming lockout feature has been activated, the data
in that block can no longer be erased or programmed; data
in other memory locations can still be changed through the
regular programming methods. To activate the lockout fea-
ture, a series of seven program commands to specific
addresses with specific data must be performed. Please
see Boot Block Lockout Feature Enable Algorithm.
If the boot block lockout feature has been activated on
either block, the chip erase function will be disabled.
BOOT BLOCK LOCKOUT DETECTION:
method is available to determine whether programming of
either boot block section is locked out. See Software Prod-
uct Identification Entry and Exit sections. When the device
is in the software product identification mode, a read from
location 00002H will show if programming the lower
address boot block is locked out while reading location
FFFF2H will do so for the upper boot block. If the data is
FE, the corresponding block can be programmed; if the
data is FF, the program lockout feature has been activated
and the corresponding block cannot be programmed. The
software product identification exit mode should be used to
return to standard operation
A software
Absolute Maximum Ratings*
Temperature Under Bias................................ -55
°
C to +125
°
C
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Storage Temperature..................................... -65
°
C to +150
°
C
All Input Voltages (including NC Pins)
with Respect to Ground...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground.............................-0.6V to V
CC
+ 0.6V
Voltage on A9 (including NC Pins)
with Respect to Ground...................................-0.6V to +13.5V
相關(guān)PDF資料 |
PDF描述 |
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| AT29BV040A | 4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory |
| AT29BV040A-25 | 4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory |
| AT29BV040A-25TC | 4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory |
| AT29BV040A-25TI | 4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory |
| AT29BV040A-35 | 4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT29BV020_08 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:2-megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory |
| AT29BV020-12JC | 功能描述:閃存 2M (256K X 8) 2.7V- 120NS COM TEMP RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT29BV020-12JI | 功能描述:閃存 2M (256K X 8) 2.7V- 120NS IND TEMP RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT29BV020-12JU | 功能描述:閃存 Parallel 閃存 120NS, GR RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT29BV020-12TC | 功能描述:閃存 2M (256K X 8) 2.7V- 120NS COM TEMP RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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