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參數(shù)資料
| 型號： | AT29BV020 |
| 廠商： | Atmel Corp. |
| 英文描述： | 256K x 8 Single 2.7-volt Battery-Voltage Flash Memory(256K x 8單電源2.7V Battery-Voltage技術(shù)閃速存儲器) |
| 中文描述： | 256K × 8單2.7伏電池電壓快閃記憶體（256K × 8單電源為2.7V電池電壓技術(shù)閃速存儲器） |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 139K |
| 代理商： | AT29BV020 |
1
Features
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Software Protected Programming
Fast Read Access Time - 250 ns
Low Power Dissipation
– 15 mA Active Current
– 40 μA CMOS Standby Current
Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 1024 Sectors (256 bytes/sector)
– Internal Address and Data Latches for 256 Bytes
Two 8K Bytes Boot Blocks with Lockout
Fast Sector Program Cycle Time - 20 ms Max.
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
Description
The AT29BV020 is a 2.7-volt-only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 2 megabits of memory is organized as 262,144 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,
the device offers access times to 250 ns, and a low 54 mW power dissipation. When
the device is deselected, the CMOS standby current is less than 40
μ
A. The device
endurance is such that any sector can typically be written to in excess of 10,000
times. The programming algorithm is compatible with other devices in Atmel’s Low
Voltage Flash family of products.
2-Megabit
(256K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT29BV020
Rev. 0402C–10/98
Pin Configurations
Pin Name
Function
A0 - A17
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
A17
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
PLCC Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
3
3
3
1
1
1
1
1
1
2
I
I
G
I
I
I
I
A
A
A
N
V
W
A
(continued)
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PDF描述 |
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| AT29BV040A | 4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory |
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| AT29BV040A-25TC | 4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory |
| AT29BV040A-25TI | 4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT29BV020_08 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:2-megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory |
| AT29BV020-12JC | 功能描述:閃存 2M (256K X 8) 2.7V- 120NS COM TEMP RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT29BV020-12JI | 功能描述:閃存 2M (256K X 8) 2.7V- 120NS IND TEMP RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT29BV020-12JU | 功能描述:閃存 Parallel 閃存 120NS, GR RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT29BV020-12TC | 功能描述:閃存 2M (256K X 8) 2.7V- 120NS COM TEMP RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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