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參數(shù)資料
| 型號(hào)： | AT29BV020 |
| 廠商： | Atmel Corp. |
| 英文描述： | 256K x 8 Single 2.7-volt Battery-Voltage Flash Memory(256K x 8單電源2.7V Battery-Voltage技術(shù)閃速存儲(chǔ)器) |
| 中文描述： | 256K × 8單2.7伏電池電壓快閃記憶體（256K × 8單電源為2.7V電池電壓技術(shù)閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 139K |
| 代理商： | AT29BV020 |
AT29BV020
2
To allow for simple in-system reprogrammability, the
AT29BV020 does not require high input voltages for pro-
gramming. The device can be operated with a single 2.7V
to 3.6V supply. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the AT29BV020
is performed on a sector basis; 256 bytes of data are
loaded into the device and then simultaneously pro-
grammed.
During a reprogram cycle, the address locations and 256
bytes of data are captured at microprocessor speed and
internally latched, freeing the address and data bus for
other operations. Following the initiation of a program
cycle, the device will automatically erase the sector and
then program the latched data using an internal control
timer. The end of a program cycle can be detected by
DATA polling of I/O7. Once the end of a program cycle has
been detected, a new access for a read or program can
begin.
Block Diagram
Device Operation
READ:
The AT29BV020 is accessed like an EPROM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high
impedance state whenever CE or OE is high. This dual-line
control gives designers flexibility in preventing bus conten-
tion.
SOFTWARE DATA PROTECTION PROGRAMMING:
The
AT29BV020 has 1024 individual sectors, each 256 bytes.
Using the software data protection feature, byte loads are
used to enter the 256 bytes of a sector to be programmed.
The AT29BV020 can only be programmed or repro-
grammed using the software data protection feature. The
device is programmed on a sector basis. If a byte of data
within the sector is to be changed, data for the entire 256-
byte sector must be loaded into the device. The data in any
byte that is not loaded during the programming of its sector
will be indeterminate. The AT29BV020 automatically does
a sector erase prior to loading the data into the sector. An
erase command is not required.
Software data protection protects the device from inadvert-
ent programming. A series of three program commands to
specific addresses with specific data must be presented to
the device before programming may occur. The same three
program commands must begin each program operation.
All software program commands must obey the sector pro-
gram timing specifications. Power transitions will not reset
the software data protection feature, however the software
feature will guard against inadvertent program cycles dur-
ing power transitions.
Any attempt to write to the device without the 3-byte com-
mand sequence will start the internal write timers. No data
will be written to the device; however, for the duration of
t
WC
, a read operation will effectively be a polling operation.
After the software data protection’s 3-byte command code
is given, a byte load is performed by applying a low pulse
on the WE or CE input with CE or WE low (respectively)
and OE high. The address is latched on the falling edge of
CE or WE, whichever occurs last. The data is latched by
the first rising edge of CE or WE.
The 256 bytes of data must be loaded into each sector. Any
byte that is not loaded during the programming of its sector
will be indeterminate. Once the bytes of a sector are loaded
into the device, they are simultaneously programmed dur-
ing the internal programming period. After the first data
byte has been loaded into the device, successive bytes are
entered in the same manner. Each new byte to be pro-
grammed must have its high to low transition on WE (or
CE) within 150
μ
s of the low to high transition of WE (or
CE) of the preceding byte. If a high to low transition is not
detected within 150
μ
s of the last low to high transition, the
load period will end and the internal programming period
will start. A8 to A17 specify the sector address. The sector
address must be valid during each high to low transition of
WE (or CE). A0 to A7 specify the byte address within the
sector. The bytes may be loaded in any order; sequential
loading is not required.
HARDWARE DATA PROTECTION:
protect against inadvertent programs to the AT29BV020 in
the following ways: (a) V
CC
sense—if V
CC
is below 2.0V
(typical), the program function is inhibited; (b) V
CC
power on
delay—once V
CC
has reached the V
CC
sense level, the
device will automatically time out 10 ms (typical) before
programming; (c) Program inhibit—holding any one of OE
low, CE high or WE high inhibits program cycles; and (d)
Noise filter—pulses of less than 15 ns (typical) on the WE
or CE inputs will not initiate a program cycle.
INPUT LEVELS:
While operating with a 2.7V to 3.6V
power supply, the address inputs and control inputs
(
OE,
CE and WE) may be driven from 0 to 5.5V without
adversely affecting the operation of the device. The I/O
lines can only be driven from 0 to V
CC
+ 0.6V.
Hardware features
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT29BV040A | 4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory |
| AT29BV040A-25 | 4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory |
| AT29BV040A-25TC | 4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory |
| AT29BV040A-25TI | 4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory |
| AT29BV040A-35 | 4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT29BV020_08 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:2-megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory |
| AT29BV020-12JC | 功能描述:閃存 2M (256K X 8) 2.7V- 120NS COM TEMP RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT29BV020-12JI | 功能描述:閃存 2M (256K X 8) 2.7V- 120NS IND TEMP RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT29BV020-12JU | 功能描述:閃存 Parallel 閃存 120NS, GR RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT29BV020-12TC | 功能描述:閃存 2M (256K X 8) 2.7V- 120NS COM TEMP RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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