參數(shù)資料
型號(hào): AS8F128K32
廠(chǎng)商: Austin Semiconductor, Inc
英文描述: 128K x 32 FLASH FLASH MEMORY ARRAY
中文描述: 128K的× 32閃光的閃存陣列
文件頁(yè)數(shù): 16/22頁(yè)
文件大?。?/td> 394K
代理商: AS8F128K32
FLASH
AS8F128K32
Austin Semiconductor, Inc.
AS8F128K32
Rev. 2.0 5/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
16
FIGURE 12: Toggle Bit Timings (During Embedded Algorithms)
NOTES:
VA = Valid address; not required for I/O6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
*
applies to every 8th byte.
AC CHARACTERISTICS: Erase and Program Operations, Alternate CEx\
Controlled Writes
SYMBOL
PARAMETER
JEDEC Standard
t
AVAV
Write Cycle Time
1
t
WC
Min
60
70 90 120 150
ns
Address Setup Time
t
AVEL
t
AS
Min
ns
Address Hold Time
t
ELAX
t
AH
Min
45
45 45
50
50
ns
Data Setup Time
t
DVEH
t
DS
Min
30
30 45
50
50
ns
Data Hold Time
t
EHDX
t
DH
Min
ns
Output Enable Setup Time
1
t
OES
Min
ns
Read Recover Time Before Write
t
GHEL
t
GHEL
Min
ns
WEx\ Setup Time
t
EHWH
t
WS
Min
ns
WEx\ Hold Time
t
EHWH
t
WH
Min
ns
CEx\ Pulse Width
t
ELEH
t
CP
Min
30
35 45
50
50
ns
CEx\ Pulse Width High
t
EHEL
t
CPH
Min
ns
Byte Programming Operation
2
Chip/Sector Erase Operation
2
t
WHWH1
t
WHWH1
TYP
μs
t
WHWH2
t
WHWH2
TYP
sec
1.0
0
0
20
14
0
0
0
0
UNIT
-70 -90 -120 -150
-60
DESCRIPTION
NOTES:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
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