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參數(shù)資料
| 型號： | AS7C33512PFS16A |
| 廠商： | Alliance Semiconductor Corporation |
| 英文描述： | 3.3V 512K×16 Pipeline Burst Synchronous SRAM(3.3V 512K×16流水線脈沖同步靜態(tài)RAM) |
| 中文描述： | 3.3為512k × 16管道爆裂同步SRAM的電壓（3.3V為512k × 16流水線脈沖同步靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 215K |
| 代理商： | AS7C33512PFS16A |
AS7C33512PFS16A
AS7C33512PFS18A
3/13/01
;
v.0.9
Alliance Semiconductor
5
TQFP thermal resistance
* This parameter is sampled.
DC electrical characteristics
DC electrical characteristics for 2.5V I/O operation
* V
min = –2.0V for pulse width less than 0.2 × t
.
Input voltage ranges apply to 3.3V I/O operation. For 2.5V I/O operation, contact factory for input specifications.
Description
Conditions
Symbol
θ
JA
θ
JA
Typical
Units
°
C/W
°
C/W
Thermal resistance
(junction to ambient)
*
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/JESD51
1–layer
40
4–layer
22
Thermal resistance
(junction to top of case)
*
θ
JC
8
°
C/W
Parameter
Symbol
Test conditions
–166
–150
–133
–100
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Input leakage
current
*
* LBO pin has an internal pull-up and input leakage = ±10
μ
a.
Note: ICC give with no output loading. ICC increases with faster cycle times and greater output loading.
|I
LI
|
V
DD
= Max, V
IN
= GND to V
DD
–
2
–
2
–
2
–
2
μA
Output leakage
current
|I
LO
|
OE
≥
V
IH
, V
DD
= Max,
V
OUT
= GND to V
DD
CE0 = V
IL
, CE1 = V
IH
, CE2 = V
IL
,
f = f
Max
, I
OUT
= 0 mA
Deselected, f = f
Max
, ZZ
≤
V
IL
Deselected, f = 0, ZZ
≤
0.2V
all V
IN
≤
0.2V or
≥
V
DD
– 0.2V
Deselected, f = f
Max
, ZZ
≥
V
DD
– 0.2V
All V
IN
≤
V
IL
or
≥
V
IH
I
OL
= 8 mA, V
DDQ
= 3.465V
I
OH
= –4 mA, V
DDQ
= 3.135V
–
2
–
2
–
2
–
2
μA
Operating power
supply current
I
CC
–
475
–
450
–
425
–
325
mA
Standby power
supply current
I
SB
–
130
–
110
–
100
–
90
mA
I
SB1
–
30
–
30
–
30
–
30
I
SB2
–
30
–
30
–
30
–
30
Output voltage
V
OL
V
OH
–
0.4
–
0.4
–
0.4
–
0.4
V
2.4
–
2.4
–
2.4
–
2.4
–
Parameter
Symbol
Test conditions
OE
≥
V
IH
, V
DD
= Max,
V
OUT
= GND to V
DD
I
OL
= 2 mA, V
DDQ
= 2.65V
I
OH
= –2 mA, V
DDQ
= 2.35V
–166
–150
–133
–100
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Output leakage
current
|I
LO
|
–1
1
–1
1
–1
1
–1
1
μA
Output voltage
V
OL
V
OH
–
0.7
–
0.7
–
0.7
–
0.7
V
1.7
–
1.7
–
1.7
–
1.7
–
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS7C33512PFS18A | 3.3V 512K x 18 pipeline burst synchronous SRAM |
| AS7C33512PFS18A-133TQC | 3.3V 512K x 18 pipeline burst synchronous SRAM |
| AS7C33512PFS18A-133TQCN | 3.3V 512K x 18 pipeline burst synchronous SRAM |
| AS7C33512PFS18A-133TQI | 3.3V 512K x 18 pipeline burst synchronous SRAM |
| AS7C33512PFS18A-133TQIN | 3.3V 512K x 18 pipeline burst synchronous SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C33512PFS18A | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 pipeline burst synchronous SRAM |
| AS7C33512PFS18A-133TQC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 pipeline burst synchronous SRAM |
| AS7C33512PFS18A-133TQCN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 pipeline burst synchronous SRAM |
| AS7C33512PFS18A-133TQI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 pipeline burst synchronous SRAM |
| AS7C33512PFS18A-133TQIN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 pipeline burst synchronous SRAM |
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