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參數(shù)資料
| 型號(hào)： | AS7C33512NTD18A-166TQI |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD |
| 中文描述： | 512K X 18 ZBT SRAM, 4 ns, PQFP100 |
| 封裝： | 14 X 20 MM, TQFP-100 |
| 文件頁數(shù)： | 16/19頁 |
| 文件大?。?/td> | 439K |
| 代理商： | AS7C33512NTD18A-166TQI |
AS7C33512NTD18A
11/30/04;
v.2.1
Alliance Semiconductor
16 of 19
AC test conditions
Output load: see Figure B, except for t
LZC
, t
LZOE
, t
HZOE
, t
HZC
, see Figure C.
Input pulse level: GND to 3V. See Figure A.
Z
0
= 50
D
OUT
50
Figure B: Output load (A)
30 pF*
Figure A: Input waveform
10%
90%
GND
90%
10%
+3.0V
Input rise and fall time (measured at 0.3V and 2.7V): 2 ns. See Figure A.
Input and output timing reference levels: 1.5V.
V
L
= 1.5V
for 3.3V I/O;
= V
DDQ
/2
for 2.5V I/O
Thevenin equivalent:
+3.3V for 3.3V I/O;
/+2.5V for 2.5V I/O
Notes:
1) For test conditions, see “AC Test Conditions”, Figures A, B, C
2) This paracmeter measured with output load conditon in Figure C.
3) This parameter is sampled, but not 100% tested.
4) t
HZOE
is less than t
LZOE
and t
HZC
is less than t
LZC
at any given temperature and voltage.
5) t
CH
measured HIGH above V
IH
and t
CL
measured as LOW below V
IL
6) This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must
meet the setup and hold times with stable logic levels for all rising edges of CLK when chip is enabled.
7) Write refers to
R/
W
,
BW[a:b]
.
8) Chip select refers to
CE0
,
CE1
,
CE2
.
353
/1538
5 pF*
319
/1667
D
OUT
GND
Figure C: Output load(B)
*including scope
and jig capacitance
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| AS7C33512NTD18A-166TQIN | 3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C33512NTD18A-166TQIN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD |
| AS7C33512NTD32A | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 32/36 Pipelined SRAM with NTD |
| AS7C33512NTD32A-133TQC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 32/36 Pipelined SRAM with NTD |
| AS7C33512NTD32A-133TQCN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 32/36 Pipelined SRAM with NTD |
| AS7C33512NTD32A-133TQI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 32/36 Pipelined SRAM with NTD |
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