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參數(shù)資料
| 型號(hào)： | AS7C33256NTF32A-75TQCN |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
| 中文描述： | 256K X 32 ZBT SRAM, 7.5 ns, PQFP100 |
| 封裝： | 14 X 20 MM, LEAD FREE, TQFP-100 |
| 文件頁(yè)數(shù)： | 7/18頁(yè) |
| 文件大?。?/td> | 427K |
| 代理商： | AS7C33256NTF32A-75TQCN |
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AS7C33256NTF32A
AS7C33256NTF36A
11/8/04, v. 1.1
Alliance Semiconductor
P. 7 of 18
State Diagram for NTD SRAM
Recommended operating conditions at 3.3V I/O
Recommended operating conditions at 2.5V I/O
Absolute maximum ratings
1
Parameter
Power supply voltage relative to GND
1 Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions may affect reliability.
Symbol
V
DD
, V
DDQ
V
IN
V
IN
P
D
I
OUT
T
stg
T
bias
Min
–0.5
Max
+4.6
Unit
V
Input voltage relative to GND (input pins)
–0.5
V
DD
+ 0.5
V
DDQ
+ 0.5
1.8
V
Input voltage relative to GND (I/O pins)
Power dissipation
–0.5
–
V
W
DC output current
–
50
mA
o
C
o
C
Storage temperature (plastic)
Temperature under bias (Junction)
–65
–65
+150
+150
Parameter
Symbol
V
DD
V
DDQ
Vss
Min
3.135
3.135
0
Nominal
3.3
3.3
0
Max
3.465
3.465
0
Unit
V
V
V
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Parameter
Symbol
V
DD
V
DDQ
Vss
Min
3.135
2.375
0
Nominal
3.3
2.5
0
Max
3.465
2.625
0
Unit
V
V
V
Supply voltage for inputs
Supply voltage for I/O
Ground supply
D
Dsel
Rad
Read
Dsel
Read
Burst
Burst
Write
Read
Write
Burst
Read
R
W
Burst
Write
D
Dsel
Write
Wie
Burst
Dsel
Burst
Burst
Write
Read
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS7C33256NTF32A-75TQI | 3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF32A-75TQIN | 3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF32A-85TQC | 3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF32A-85TQCN | 3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF32A-85TQI | 3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C33256NTF32A-75TQI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF32A-75TQIN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF32A-85TQC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF32A-85TQCN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF32A-85TQI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
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