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參數(shù)資料
| 型號： | AS7C33256NTF32A-75TQCN |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
| 中文描述： | 256K X 32 ZBT SRAM, 7.5 ns, PQFP100 |
| 封裝： | 14 X 20 MM, LEAD FREE, TQFP-100 |
| 文件頁數(shù)： | 15/18頁 |
| 文件大?。?/td> | 427K |
| 代理商： | AS7C33256NTF32A-75TQCN |
AS7C33256NTF32A
AS7C33256NTF36A
11/8/04, v. 1.1
Alliance Semiconductor
P. 15 of 18
AC test conditions
Output Load: see Figure B,
except for
t
LZC
, t
LZOE
, t
HZOE
, t
HZC
see Figure C.
Input pulse level: GND to 3V. See Figure A.
Input rise and fall time (Measured at 0.3V and 2.7V): 2 ns. See Figure A.
Input and output timing reference levels: 1.5V.
Z
0
=50
D
out
50
V
L
=1.5V
Figure B: Output load (A)
30 pF*
Figure A: Input waveform
10%
90%
GND
90%
10%
+3.0V
353
/
1538
5 pF*
319
/1667
D
OUT
GND
Figure C: Output load(B)
*including scope
and jig capacitance
Thevenin equivalent:
+3.3V for 3.3V I/O;
/+2.5V for 2.5V I/O
Notes
1
2
3
4
5
6
7
8
9
For test conditions, see
AC Test Conditions
, Figures A, B, C.
This parameter measured with output load condition in Figure C
This parameter is sampled and not 100% tested.
t
HZOE
is less than t
LZOE
; and t
HZC
is less than t
LZC
at any given temperature and voltage.
t
HZCN
is a
‘no load’ parameter to indicate exactly when SRAM outputs have stopped driving.
I
CC
given with no output loading. I
CC
increases with faster cycle times and greater output loading.
Transitions are measured ±500 mV from steady state voltage. Output loading specified with C
L
= 5 pF as in Figure C.
t
CH
measured as high above VIH, and t
CL
measured as low below VIL
This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs mus
meet the setup and hold times with stable logic levels for all rising edges of CLK when chip is enabled.
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| AS7C33256NTF32A-75TQI | 3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF32A-75TQIN | 3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF32A-85TQC | 3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF32A-85TQCN | 3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF32A-85TQI | 3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C33256NTF32A-75TQI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF32A-75TQIN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF32A-85TQC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF32A-85TQCN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF32A-85TQI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD |
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