參數(shù)資料
型號(hào): AS7C31026B-20BIN
廠商: ALLIANCE MEMORY INC
元件分類(lèi): SRAM
英文描述: 64K X 16 STANDARD SRAM, 20 ns, PBGA48
封裝: 6 X 8 MM, LEAD FREE, BGA-48
文件頁(yè)數(shù): 9/11頁(yè)
文件大?。?/td> 293K
代理商: AS7C31026B-20BIN
AS7C31026B
2/27/04, v 1.2
Alliance Semiconductor
P. 7 of 11
AC test conditions
Notes
1
During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.
2
This parameter is sampled, but not 100% tested.
3
For test conditions, see AC Test Conditions, Figures A and B.
4
These parameters are specified with CL = 5 pF, as in Figures B. Transition is measured ± 500 mV from steady-state voltage.
5
This parameter is guaranteed, but not tested.
6WE is high for read cycle.
7CE and OE are low for read cycle.
8
Address is valid prior to or coincident with CE transition low.
9
All read cycle timings are referenced from the last valid address to the first transitioning address.
10 N/A
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 Not applicable.
13 C = 30 pF, except all high Z and low Z parameters where C = 5 pF.
255
C13
320
GND
+3.3 V
Figure B: 3.3 V Output load
168
Thevenin Equivalent:
DOUT
+1.728 V (5 V and 3.3 V)
10%
90%
10%
90%
GND
+3.0 V
Figure A: Input pulse
2 ns
DOUT
– Output load: see Figure B.
– Input pulse level: GND to 3.0 V. See Figure A.
– Input rise and fall times: 2 ns. See Figure A.
– Input and output timing reference levels: 1.5
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