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參數(shù)資料
| 型號： | AS7C31026B-20BIN |
| 廠商： | ALLIANCE MEMORY INC |
| 元件分類： | SRAM |
| 英文描述： | 64K X 16 STANDARD SRAM, 20 ns, PBGA48 |
| 封裝： | 6 X 8 MM, LEAD FREE, BGA-48 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 293K |
| 代理商： | AS7C31026B-20BIN |
February 2004
Copyright Alliance Semiconductor. All rights reserved.
AS7C31026B
3.3 V 64K X 16 CMOS SRAM
2/27/04, v 1.2
Alliance Semiconductor
P. 1 of 11
Features
Industrial and commercial versions
Organization: 65,536 words × 16 bits
Center power and ground pins for low noise
High speed
- 10/12/15/20 ns address access time
- 5, 6, 7, 8 ns output enable access time
Low power consumption: ACTIVE
- 288 mW / max @ 10 ns
Low power consumption: STANDBY
- 18 mW / max CMOS I/O
6 T 0.18 u CMOS technology
Easy memory expansion with CE, OE inputs
TTL-compatible, three-state I/O
JEDEC standard packaging
- 44-pin 400 mil SOJ
- 44-pin TSOP 2-400
- 48-ball 6 × 8 mm mBGA
ESD protection
≥ 2000 volts
Latch-up current
≥ 200 mA
Logic block diagram
64 K × 16
Array
OE
CE
WE
Column decoder
Ro
w
decod
er
A0
A1
A2
A3
A4
A5
A7
VCC
GND
A8
A9
A1
0
A1
1
A1
2
A1
3
A1
4
A1
5
Control circuit
I/O0–I/O7
I/O8–I/O15
UB
LB
I/O
buffer
A6
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
I/O13
I/O12
GND
VCC
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
A0
CE
I/O0
I/O1
I/O2
I/O3
VCC
GND
I/O4
I/O5
I/O6
I/O7
WE
A15
A14
A13
44-Pin SOJ (400 mil), TSOP 2
21
22
A12
NC
UB
LB
I/O15
I/O14
2
A3
3
A2
4
A1
1
A4
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
43
42
41
44
A6
A7
OE
A5
AS7C3102
6B
Selection guide
-10
-12
-15
-20
Unit
Maximum address access time
10
12
15
20
ns
Maximum output enable access time
56
7
8
ns
Maximum operating current
80
75
70
65
mA
Maximum CMOS standby current
55
5
mA
0000048 - BGA Ball-Grid-Array Package
1
2
345
6
ALB
OE
A0 A1 A2
NC
BI/O8
UB
A3 A4 CE I/O0
CI/O9 I/O10 A5 A6 I/O1 I/O2
DVSS I/O11 NC A7 I/O3 VDD
EVDD I/O12 NC NC I/O4 VSS
FI/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
HNC
A8A9 A10 A11
NC
Pin and ball arrangement
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C31026B-20JC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3 V 64K X 16 CMOS SRAM |
| AS7C31026B-20JCN | 功能描述:靜態(tài)隨機(jī)存取存儲器 1M, 3.3V, 20ns, FAST 64K x 16 Asynch 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C31026B-20JCNTR | 功能描述:靜態(tài)隨機(jī)存取存儲器 1M, 3.3V, 20ns, FAST 64K x 16 Asynch 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C31026B-20JI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3 V 64K X 16 CMOS SRAM |
| AS7C31026B-20JIN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3 V 64K X 16 CMOS SRAM |
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