參數(shù)資料
型號(hào): AS7C31024A
廠商: Alliance Semiconductor Corporation
英文描述: 3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)(3.3V 128KX8 CMOS 靜態(tài)RAM(改進(jìn)的引腳))
中文描述: 3.3 128KX8 CMOS SRAM的(進(jìn)化管腳)(3.3 128KX8的CMOS靜態(tài)隨機(jī)存儲(chǔ)器(改進(jìn)的引腳))
文件頁數(shù): 2/8頁
文件大?。?/td> 113K
代理商: AS7C31024A
AS7C1024A
AS7C31024A
2/6/01; V0.9
Alliance Semiconductor
P. 2 of 8
Functional description
The AS7C1024A and AS7C31024A are high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as
131,012 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.
Equal address access and cycle times (t
AA
, t
RC
, t
WC
) of 10/12/15/20 ns with output enable access times (t
OE
) of 3/3/4/5 ns are ideal for high
performance applications. Active high and low chip enables (CE1, CE2) permit easy memory expansion with multiple-bank systems.
When CE1 is high or CE2 is low the devices enter standby mode. If inputs are still toggling, the device will consume I
SB
power. If the bus is
static, then full standby power is reached (I
SB1
). For example, the AS7C31024A is guaranteed not to exceed 36mW under nominal full standby
conditions. All devices in this family will retain data when VCC is reduced as low as 2.0V
A write cycle is accomplished by asserting write enable (WE) and both chip enables (CE1, CE2). Data on the input pins I/O0-I/O7 is written
on the rising edge of WE (write cycle 1) or the active-to-inactive edge of CE1 or CE2 (write cycle 2). To avoid bus contention, external devices
should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and both chip enables (CE1, CE2), with write enable (WE) high. The chips drive
I/O pins with the data word referenced by the input address. When either chip enable is inactive, output enable is inactive, or write enable is
active, output drivers stay in high-impedance mode.
Absolute maximum ratings
Note: Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and functional oper-
ation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Truth table
CE1
Key: X = Don’t Care, L = Low, H = High
Parameter
Symbol
Min
Max
Unit
Voltage on V
CC
relative to GND
AS7C1024A
V
t1
V
t1
V
t2
P
D
T
stg
T
bias
I
OUT
–0.50
+7.0
V
AS7C31024A
-0.50
+5.0
V
Voltage on any pin relative to GND
Both
–0.50
V
CC
+0.50
1.0
V
Power dissipation
Both
W
°
C
°
C
mA
Storage temperature (plastic)
Both
–65
+150
Ambient temperature with V
CC
applied
DC current into outputs (low)
Both
–55
+125
Both
20
CE2
WE
OE
Data
Mode
H
X
X
X
High Z
Standby (I
SB
, I
SB1
)
Standby (I
SB
, I
SB1
)
Output disable (I
CC
)
Read (I
CC
)
Write (
ICC
)
X
L
X
X
High Z
L
H
H
H
High Z
L
H
H
L
D
OUT
D
IN
L
H
L
X
相關(guān)PDF資料
PDF描述
AS7C31024B-10JC 3.3V 128K X 8 CMOS SRAM
AS7C31024B-10JCN 8-Bit Parallel-Out Serial Shift Registers 14-TVSOP -40 to 85
AS7C31024B-10STC 8-Bit Parallel-Out Serial Shift Registers 14-TVSOP -40 to 85
AS7C31024B-10STCN 3.3V 128K X 8 CMOS SRAM
AS7C31024B-10TC 8-Bit Parallel-Out Serial Shift Registers 14-SOIC -40 to 85
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AS7C31024A-10JC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)
AS7C31024A-10JI 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)
AS7C31024A-10STC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)
AS7C31024A-10STI 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)
AS7C31024A-10TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)