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參數(shù)資料
| 型號： | AS7C164-15JCN |
| 廠商： | ALLIANCE MEMORY INC |
| 元件分類： | SRAM |
| 英文描述： | IC,AS7C164-15JCN,SOJ-28 ASY SRAM,15NS,8K X 8,5V |
| 中文描述： | 8K X 8 STANDARD SRAM, 15 ns, PDSO28 |
| 封裝： | 0.300 INCH, LEAD FREE, PLASTIC, SOJ-28 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 389K |
| 代理商： | AS7C164-15JCN |
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1During VCC power-up, a pull-up resistor to VCC on CE1 is required to meet ISB specification.
2
This parameter is sampled, but not 100% tested.
3
For test conditions, see AC Test Conditions, Figures A, B, and C.
4tCLZ and tCHZ are specified with CL = 5pF as in Figures B or C. Transition is measured ±500mV from steady-state voltage.
5
This parameter is guaranteed, but not 100% tested.
6WE is High for read cycle.
7CE1 and OE are Low and CE2 is High for read cycle.
8
Address valid prior to or coincident with CE1 transition Low and CE2 transition High.
9
All read cycle timings are referenced from the last valid address to the first transitioning address.
10 CE1 or WE must be High or CE2 Low during address transitions. Either CE or WE asserting high terminates a write cycle.
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 CE1 and CE2 have identical timing.
13 2V data retention applies to the commercial operating range only.
14 C = 30pF, except on High Z and Low Z parameters, where C = 5pF.
Parameter
Symbol
Test conditions
Min
Max
Unit
VCC for data retention
VDR
VCC = 2.0V
CE1
≥ V
CC–0.2V or
CE2
≤ 0.2V
2.0
–
V
Data retention current
ICCDR
–60
A
Chip enable to data retention time
tCDR
0–
ns
Operation recovery time
tR
tRC
–ns
VCC
CE1
tR
tCDR
Data retention mode
VCC
VDR ≥ 2.0V
VIH
VDR
CS2
tR
tCDR
VIH
VDR
-Output load: see Figure B or Figure C.
- Input pulse level: GND to 3.0V. See Figure A.
- Input rise and fall times: 2 ns. See Figure A.
- Input and output timing reference levels: 1.5V.
10%
90%
10%
90%
GND
+3.0V
Figure A: Input pulse
2ns
255
C(14)
480
DRXW
GND
+5V
Figure B: 5V Output lo
DG
255
C(14)
320
DRXW
GND
+5V
Figure C: 3.3V Output load
168
Thevenin Equivalent:
DRXW
+1.728V (5V)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| AS7C164-15JCNTR | 功能描述:靜態(tài)隨機(jī)存取存儲器 64K Fast 8K x 8 5V Asynch RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C164-15PC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| AS7C164-20 | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 8K X 8 CMOS SRAM |
| AS7C164-20JC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 8K X 8 CMOS SRAM |
| AS7C164-20JCN | 功能描述:靜態(tài)隨機(jī)存取存儲器 64K Fast 8K x 8 5V Asynch RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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