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參數(shù)資料
| 型號： | AS7C164-15JCN |
| 廠商： | ALLIANCE MEMORY INC |
| 元件分類： | SRAM |
| 英文描述： | IC,AS7C164-15JCN,SOJ-28 ASY SRAM,15NS,8K X 8,5V |
| 中文描述： | 8K X 8 STANDARD SRAM, 15 ns, PDSO28 |
| 封裝： | 0.300 INCH, LEAD FREE, PLASTIC, SOJ-28 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 389K |
| 代理商： | AS7C164-15JCN |
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The AS7C164 is a high performance CMOS 65,536-bit Static Random Access Memory (SRAM) device organized as 8,192 words × 8 bits. It is
designed for memory applications where fast data access, low power, and simple interfacing are desired.
Equal address access and cycle times (tAA, tRC, tWC) of 12/15/20 ns with output enable access times (tOE) of 6/7/8 ns are ideal for high
performance applications. Active high and low chip enables (CE1, CE2) permit easy memory expansion with multiple-bank memory systems.
When CE1 is High or CE2 is Low the device enters standby mode. The standard AS7C164 is guaranteed not to exceed 11.0 mW power
consumption in standby mode, and typically requires only 250 W; it offers 2.0V data retention with maximum power of 120 W.
A write cycle is accomplished by asserting write enable (WE) and both chip enables (CE1, CE2). Data on the input pins I/O0-I/O7 is written
on the rising edge of WE (write cycle 1) or the active-to-inactive edge of CE1 or CE2 (write cycle 2). To avoid bus contention, external devices
should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and both chip enables (CE1, CE2), with write enable (WE) High. The chip drives
I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active,
output drivers stay in high-impedance mode.
All chip inputs and outputs are TTL-compatible, and operation is from a single 5V supply. The AS7C164 is packaged in 300 mil SOJ packages.
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NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional oper-
ation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
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Key: X = Don’t Care, L = Low, H = High
Parameter
Device
Symbol
Min
Max
Unit
Voltage on VCC relative to GND
AS7C164
Vt1
–0.50
+7.0
V
Voltage on any pin relative to GND
Vt2
–0.50
VCC + 0.50
V
Power dissipation
PD
–1.0
W
Storage temperature (plastic)
Tstg
–65
+150
oC
Ambient temperature with VCC applied
Tbias
–55
+125
oC
DC current into outputs (low)
Iout
–20
mA
CE1
CE2
WE
OE
Data
Mode
HX
X
High Z
Standby (ISB, ISB1)
XL
X
High Z
Standby (ISB, ISB1)
L
H
High Z
Output disable (ICC)
LH
H
L
Dout
Read (ICC)
LH
L
X
Din
Write (ICC)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C164-15JCNTR | 功能描述:靜態(tài)隨機(jī)存取存儲器 64K Fast 8K x 8 5V Asynch RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C164-15PC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| AS7C164-20 | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 8K X 8 CMOS SRAM |
| AS7C164-20JC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 8K X 8 CMOS SRAM |
| AS7C164-20JCN | 功能描述:靜態(tài)隨機(jī)存取存儲器 64K Fast 8K x 8 5V Asynch RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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