參數(shù)資料
型號: AS7C164-15JCN
廠商: ALLIANCE MEMORY INC
元件分類: SRAM
英文描述: IC,AS7C164-15JCN,SOJ-28 ASY SRAM,15NS,8K X 8,5V
中文描述: 8K X 8 STANDARD SRAM, 15 ns, PDSO28
封裝: 0.300 INCH, LEAD FREE, PLASTIC, SOJ-28
文件頁數(shù): 3/8頁
文件大?。?/td> 389K
代理商: AS7C164-15JCN
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Parameter
Device
Symbol
Min
Typical
Max
Unit
Supply voltage
AS7C164
VCC
4.5
5.0
5.5
V
Input voltage
AS7C164
VIH
2.2
VCC+1
V
VIL
–0.5*
* VIL min = –3.0V for pulse width less than tRC/2.
–0.8
V
Ambient operating temperature
AS7C164
TA
0–
70
oC
Parameter
Symbol
Test Conditions
Device
-12
-15
-20
Unit
Min Max Min Max Min Max
Input leakage current
|I
LI|
VCC = Max,
VIN = GND to VCC
1
–1
A
Output leakage current
|I
LO|
VCC = Max,
CE1 = VIH or CE2 = VIL,
VOUT = GND to VCC
1
–1
A
Operating power supply
current
ICC
VCC = Max,
CE1 = VIL, CE2 = VIH,
f = fMax, IOUT = 0 mA
AS7C164
110
100
90
mA
Standby power supply
current
ISB
VCC = Max,
CE1 = VIH or CE2 = VIL,
f = fMax
AS7C164
30
25
25
mA
ISB1
VCC = Max,
CE1
V
CC–0.2V or
CE2
0.2V,
VIN 0.2V or
VIN VCC–0.2V, f = 0
AS7C164
2.0
2.0
2.0
mA
Output voltage
VOL
IOL = 8 mA, VCC = Min
0.4–0.4–0.4
V
VOH
IOH = –4 mA, VCC = Min
2.4
2.4
2.4
V
Parameter
Symbol
Signals
Test conditions
Max
Unit
Input capacitance
CIN
A, CE1, CE2, WE, OE
Vin = 0V
5
pF
I/O capacitance
CI/O
I/O
Vin = Vout = 0V
7
pF
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