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參數(shù)資料
| 型號： | AS7C164-15 |
| 廠商： | Alliance Semiconductor Corporation |
| 英文描述： | High Speed CMOS Logic Triple 3-Input AND Gates 14-SOIC -55 to 125 |
| 中文描述： | 5V的8K的× 8 CMOS SRAM的 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 224K |
| 代理商： | AS7C164-15 |
!
The AS7C164 is a high performance CMOS 65,536-bit Static Random Access Memory (SRAM) device organized as 8,192 words × 8 bits. It is
designed for memory applications where fast data access, low power, and simple interfacing are desired.
Equal address access and cycle times (t
AA
, t
RC
, t
WC
) of 12/15/20 ns with output enable access times (t
OE
) of 6/7/8 ns are ideal for high
performance applications. Active high and low chip enables (CE1, CE2) permit easy memory expansion with multiple-bank memory systems.
When CE1 is High or CE2 is Low the device enters standby mode. The standard AS7C164 is guaranteed not to exceed 11.0 mW power
consumption in standby mode, and typically requires only 250 μW; it offers 2.0V data retention with maximum power of 120 μW.
A write cycle is accomplished by asserting write enable (WE) and both chip enables (CE1, CE2). Data on the input pins I/O0-I/O7 is written
on the rising edge of WE (write cycle 1) or the active-to-inactive edge of CE1 or CE2 (write cycle 2). To avoid bus contention, external devices
should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and both chip enables (CE1, CE2), with write enable (WE) High. The chip drives
I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active,
output drivers stay in high-impedance mode.
All chip inputs and outputs are TTL-compatible, and operation is from a single 5V supply. The AS7C164 is packaged in 300 mil SOJ packages.
#&
NOTE: Stresses greater than those listed under
AbsouteMaximumRatings
may cause permanent damage to the device. This is a stress rating only and functional oper-
ation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
'#
Key: X = Don’t Care, L = Low, H = High
Parameter
Voltage on V
CC
relative to GND
Voltage on any pin relative to GND
Power dissipation
Storage temperature (plastic)
Ambient temperature with V
CC
applied
DC current into outputs (low)
Device
AS7C164
Symbol
V
t1
V
t2
P
D
T
stg
T
bias
I
out
Min
–0.50
–0.50
–
–65
–55
–
Max
+7.0
Unit
V
V
W
o
C
o
C
mA
V
CC
+ 0.50
1.0
+150
+125
20
CE1
H
X
L
L
L
CE2
X
L
H
H
H
WE
X
X
H
H
L
OE
X
X
H
L
X
Data
High Z
High Z
High Z
D
out
D
in
Mode
Standby (I
SB
, I
SB1
)
Standby (I
SB
, I
SB1
)
Output disable (I
CC
)
Read (I
CC
)
Write (I
CC
)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS7C164-20 | 5V 8K X 8 CMOS SRAM |
| AS7C164 | 5V 8K×8 CMOS SRAM(5V 8K×8 CMOS 靜態(tài)RAM) |
| AS7C251MFT18A-75TQIN | 2.5V 1M x 18 flowthrough burst synchronous SRAM |
| AS7C251MFT18A-85TQIN | 2.5V 1M x 18 flowthrough burst synchronous SRAM |
| AS7C251MFT18A-10TQIN | 2.5V 1M x 18 flowthrough burst synchronous SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C164-15JC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 8K X 8 CMOS SRAM |
| AS7C164-15JCN | 功能描述:靜態(tài)隨機(jī)存取存儲器 Fast Asynch 5V 8Kx8 15ns 64K RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C164-15JCNTR | 功能描述:靜態(tài)隨機(jī)存取存儲器 64K Fast 8K x 8 5V Asynch RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C164-15PC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| AS7C164-20 | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 8K X 8 CMOS SRAM |
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