參數(shù)資料
型號: AS7C251MFT18A-85TQIN
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 2.5V 1M x 18 flowthrough burst synchronous SRAM
中文描述: 1M X 18 STANDARD SRAM, 8.5 ns, PQFP100
封裝: 14 X 20 MM, LEAD FREE, TQFP-100
文件頁數(shù): 1/19頁
文件大?。?/td> 511K
代理商: AS7C251MFT18A-85TQIN
December 2004
Copyright Alliance Semiconductor. All rights reserved.
AS7C251MFT18A
12/24/04, v. 1.2
Alliance Semiconductor
1 of 19
2.5V 1M x 18 flowthrough burst synchronous SRAM
Features
Organization: 1,048,576 words x18 bits
Fast clock to data access: 7.5/8.5/10 ns
Fast OE access time: 3.5/4.0 ns
Fully synchronous flow-through operation
Asynchronous output enable control
Available 100-pin TQFP package
Individual byte write and global write
Multiple chip enables for easy expansion
2.5V core power supply
Linear or interleaved burst control
Snooze mode for reduced power-standby
Logic block diagram
Selection guide
-75
8.5
7.5
275
90
60
-85
10
8.5
250
80
60
-10
12
10
230
80
60
Units
ns
ns
mA
mA
mA
Minimum cycle time
Maximum clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
Burst logic
CLK
ADSC
ADSP
LBO
CLK
CS
CLR
20
18
20
A[19:0]
20
Address
D
CS
Q
CLK
1M
x
18
Memory
array
18
18
DQb
CLK
D
registers
D
Q
registers
DQa
CLK
Q
Enable
register
CE
CLK
D
Q
Enable
rdelay
CLK
D
Q
Output
buffers
Input
registers
Power
down
DQ[a,b]
2
CE0
CE2
BW
b
BW
a
OE
ZZ
OE
CLK
BWE
GWE
18
相關(guān)PDF資料
PDF描述
AS7C251MFT18A-10TQIN 2.5V 1M x 18 flowthrough burst synchronous SRAM
AS7C251MFT18A-75TQC High Speed CMOS Logic Triple 3-Input AND Gates 14-SOIC -55 to 125
AS7C251MFT18A-75TQCN 2.5V 1M x 18 flowthrough burst synchronous SRAM
AS7C251MFT18A-75TQI High Speed CMOS Logic Triple 3-Input AND Gates 14-SOIC -55 to 125
AS7C251MFT18A 2.5V 1M x 18 flowthrough burst synchronous SRAM
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