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參數(shù)資料
| 型號： | AS7C1029 |
| 廠商： | Alliance Semiconductor Corporation |
| 英文描述： | 5V 256K X 4 CMOS SRAM (Center power and ground) |
| 中文描述： | 5V的256K × 4 CMOS SRAM的（中心電源和接地） |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 121K |
| 代理商： | AS7C1029 |
AS7C1029
12/5/06, v. 1.0
Alliance Memory
P. 3 of 9
Notes:
V
IL
min = -1.5V for pulse width less than 5ns, once per cycle.
V
IH
max = V
CC
+2.0V for pulse width less than 5ns, once per cycle.
Capacitance (
f = 1 MHz, T
a
= 25
o
C, V
CC
= NOMINAL
)
2
Parameter
Input capacitance
I/O capacitance
Recommended operating conditions
Parameter
Symbol
V
CC
V
IH
V
IL
T
A
Min
4.5
2.2
–0.5
–40
Nominal
5.0
–
–
–
Max
5.5
Unit
V
V
V
o
C
Supply voltage
Input voltage
V
CC
+ 0.5
0.8
85
Ambient operating temperature (Industrial)
DC operating characteristics (over the operating range)
1
Parameter
Symbol
|
I
LI
|
Test conditions
AS7C1029-12
Min
Unit
μ
A
Max
Input leakage current
V
CC
= Max, V
IN
= GND to V
CC
V
CC
= Max, CE = V
IH
,
V
out
= GND to V
CC
V
CC
= Max
CE
≤
V
IL
, f = f
Max,
I
OUT
= 0 mA
V
CC
= Max
CE
≥
V
IH
, f = f
Max
V
CC
= Max
CE
≥
V
CC
–0.2 V,
V
IN
≤
0.2 V or V
IN
≥
V
CC
–0.2 V,
f = 0
–
5
Output leakage current
|
I
LO
|
–
5
μ
A
Operating power supply current
I
CC
–
160
mA
Standby power supply current
1
I
SB
–
40
mA
I
SB1
10
mA
Output voltage
V
OL
V
OH
I
OL
= 8 mA, V
CC
= Min
I
OH
= –4 mA, V
CC
= Min
–
0.4
V
2.4
–
V
Symbol
C
IN
C
I/O
Signals
Test conditions
V
IN
= 3dV
V
IN
= V
OUT
= 3dV
Max
8
8
Unit
pF
pF
A,
CE
,
WE
,
OE
I/O
Note:
This parameter is guaranteed by device characterization, but is not production tested.
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