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參數(shù)資料
| 型號： | AS7C1029 |
| 廠商： | Alliance Semiconductor Corporation |
| 英文描述： | 5V 256K X 4 CMOS SRAM (Center power and ground) |
| 中文描述： | 5V的256K × 4 CMOS SRAM的（中心電源和接地） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 121K |
| 代理商： | AS7C1029 |
AS7C1029
12/5/06, v. 1.0
Alliance Memory
P. 2 of 9
Functional description
The AS7C1029 is a 5V high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as
262,144 x 4 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are
desired.
Equal address access and cycle times (t
AA
, t
RC
, t
WC
) of 12 ns with output enable access times (t
OE
) of 6 ns are ideal for high-
performance applications. The chip enable input CE permits easy memory and expansion with multiple-bank memory
systems.
When CE is high, the device enters standby mode. If inputs are still toggling, the device will consume I
SB
power. If the bus is
static, then full standby power is reached (I
SB1
).
A write cycle is accomplished by asserting write enable (
WE
) and chip enable (
CE
). Data on the input pins I/O0 through I/O7
is written on the rising edge of
WE
(write cycle 1) or
CE
(write cycle 2). To avoid bus contention, external devices should
drive I/O pins only after outputs have been disabled with output enable (
OE
) or write enable (
WE
).
A read cycle is accomplished by asserting output enable (
OE
) and chip enable (
CE
), with write enable (
WE
) high. The chips
drive I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive or write
enable is active, output drivers stay in high-impedance mode.
All chip inputs and outputs are TTL-compatible, and operation is from a single 5 V supply. The AS7C1029 is packaged in
common industry standard packages.
Notes:
Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Key: X = don’t care, L = low, H = high.
Absolute maximum ratings
Parameter
Symbol
V
t1
V
t2
P
D
T
stg
T
bias
I
OUT
Min
–0.50
–0.50
–
–55
–55
–
Max
+7.0
Unit
V
V
W
o
C
o
C
mA
Voltage on V
CC
relative to GND
Voltage on any pin relative to GND
Power dissipation
Storage temperature (plastic)
Ambient temperature with V
CC
applied
DC current into outputs (low)
V
CC
+ 0.5
1.25
+125
+125
50
Truth table
CE
H
L
L
L
WE
X
H
H
L
OE
X
H
L
X
Data
High Z
High Z
D
OUT
D
IN
Mode
Standby (I
SB
, I
SB1
)
Output disable (I
CC
)
Read (I
CC
)
Write (I
CC
)
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| AS7C1029-20JC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x9 SRAM |
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