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參數(shù)資料
| 型號(hào)： | AS6UA25616-100TC |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 100 ns, PDSO44 |
| 封裝： | 0.400 INCH, TSOP2-44 |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大?。?/td> | 206K |
| 代理商： | AS6UA25616-100TC |
6
ALLIANCE SEMICONDUCTOR
6/19/00
AS6UA25616
Data retention characteristics (over the operating range)
Data retention waveform
AC test loads and waveforms
Notes
1During VCC power-up, a pull-up resistor to VCC on CS is required to meet ISB specification.
2
This parameter is sampled, but not 100% tested.
3
For test conditions, see AC Test Conditions.
4tCLZ and tCHZ are specified with CL = 5pF as in Figure C. Transition is measured ±500 mV from steady-state voltage.
5
This parameter is guaranteed, but not tested.
6
WE is HIGH for read cycle.
7
CS and OE are LOW for read cycle.
8
Address valid prior to or coincident with CS transition LOW.
9
All read cycle timings are referenced from the last valid address to the first transitioning address.
10 CS or WE must be HIGH during address transitions. Either CS or WE asserting high terminates a write cycle.
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 N/A.
13 1.2V data retention applies to commercial and industrial temperature range operations.
14 C=30pF, except at high Z and low Z parameters, where C=5pF.
Parameter
Symbol
Test conditions
Min
Max
Unit
VCC for data retention
VDR
VCC = 1.2V
CS
≥ V
CC – 0.1V or
UB = LB = > VCC – 0.1V
VIN ≥ VCC – 0.1V or
VIN ≤ 0.1V
1.2V
3.6
V
Data retention current
ICCDR
–2
A
Chip deselect to data retention time
tCDR
0–
ns
Operation recovery time
tR
tRC
–ns
Parameters
VCC = 3.0V
VCC = 2.5V
VCC = 2.0V
Unit
R1
1105
16670
15294
Ohms
R2
1550
15380
11300
Ohms
RTH
645
8000
6500
Ohms
VTH
1.75V
1.2V
0.85V
Volts
VCC
CS
tR
tCDR
Data retention mode
VCC
VDR ≥ 1.2V
VIH
VDR
VCC
R1
R2
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
(a)
VCC
R1
R2
OUTPUT
5 pF
ALL INPUT PULSES
(b)
10%
90%
10%
90%
GND
VCC Typ
< 5 ns
(c)
Thevenin equivalent:
OUTPUT
RTH
V
INCLUDING
JIG AND
SCOPE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS6UA25616-BC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable |
| AS6UA25616-BI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable |
| AS6UA25616-TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable |
| AS6UA25616-TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable |
| AS6UA25617 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1.65V to 3.6V 256K x 16 Intelliwatt low power CMOS SRAM with two chip enables |
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