參數(shù)資料
型號(hào)： AS4SD4M16A2-8
英文描述： x16 SDRAM
中文描述： x16內(nèi)存
文件頁(yè)數(shù)： 25/51頁(yè)
文件大?。?/td> 1071K
代理商： AS4SD4M16A2-8
S DR A M
AS4SD16M16
Austin Semiconductor, Inc.
AS4SD16M16
Rev. 1.5 6/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
25
TRUTH TABLE 4: CURRENT STATE BANK
n
, COMMAND TO BANK
m
1,2,3,4,5,6
CURRENT STATE CS\ RAS\ CAS\ WE\
H
X
X
X
COMMAND INHIBIT (NOP/Continue previous operation)
L
H
H
H
NO OPERATION (NOP/Continue previous operation)
Idle
X
X
X
X
Any Command Otherwise Allowed to Bank m
L
L
H
H
ACTIVE (Select and active row)
L
H
L
H
READ (Select column and start READ burst)
L
H
L
L
WRITE (Select column and start WRITE burst)
L
L
H
L
PRECHARGE
L
L
H
H
ACTIVE (Select and active row)
L
H
L
H
READ (Select column and start new READ burst)
L
H
L
L
WRITE (Select column and start WRITE burst)
L
L
H
L
PRECHARGE
L
L
H
H
ACTIVE (Select and active row)
L
H
L
H
READ (Select column and start READ burst)
L
H
L
L
WRITE (Select column and start new WRITE burst)
L
L
H
L
PRECHARGE
L
L
H
H
ACTIVE (Select and active row)
L
H
L
H
READ (Select column and start new READ burst)
L
H
L
L
WRITE (Select column and start WRITE burst)
L
L
H
L
PRECHARGE
L
L
H
H
ACTIVE (Select and active row)
L
H
L
H
READ (Select column and start READ burst)
L
H
L
L
WRITE (Select column and start new WRITE burst)
L
L
H
L
PRECHARGE
NOTES:
1. This table applies when CKE
n-1
was HIGH and CKE
n
is HIGH (see Truth Table 2) and after t
XSR
has been met (if the previous
state was self refresh).
2. This table describes alternate bank operation, except where noted; i.e., the current state is for bank
n
and the commands shown
are those allowed to be issued to bank
m
(assuming bank
m
is in such a state that the given command is allowable). Exceptions
are covered in the notes below.
3. Current state definitions:
Idle:
The bank has been precharged, and t
RP
has been met.
Row Active:
A row in the bank has been activated, and t
RCD
has been met. No data bursts/accesses and no
register accesses are in progress.
Read:
A READ burst has been initiated, with auto precharge disabled, and has not yet terminated or been
terminated.
Write:
A WRITE burst has been initiated, with auto precharge disabled, and has not yet terminated or been
terminated.
Read w/ Auto
Precharge Enabled:
Starts with registration of a READ command with auto precharge enabled and ends when t
RP
has
been met. Once t
RP
is met, the bank will be in the idle state.
Write w/ Auto
Precharge Enabled:
Starts with registration of a WRITE command with auto precharge enabled and ends when t
RP
has
been met. Once t
RP
is met, the bank will be in the idle state.
4. AUTO REFRESH, SELF REFRESH and LOAD MODE REGISTER commands may only be issued when all banks are idle.
5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state
only.
6. All states and sequences not shown are illegal or reserved.
COMMAND (ACTION)
NOTES
7
7
7, 10
7, 11
9
7, 12
7, 13
9
7, 8, 14
7, 8, 15
9
7, 8, 16
7, 8, 17
9
Write
(Auto Precharge
Disabled)
Row Activating,
Active, or
Precharging
Read
(with Auto
Precharge)
Write
(with Auto
Precharge)
Any
Read
(Auto Precharge
Disabled)
(continued on next page)
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參數(shù)描述
AS4SD4M16DG-10/IT 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4 Meg x 16 SDRAM Synchronous DRAM Memory
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