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參數(shù)資料
| 型號： | AS4LC4M16S0-10FTC |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-54 |
| 文件頁數(shù)： | 22/24頁 |
| 文件大?。?/td> | 566K |
| 代理商： | AS4LC4M16S0-10FTC |
22
ALLIANCE SEMICONDUCTOR
7/5/00
AS4LC4M16S0
AS4LC16M4S0
Interleaved bank read waveform
(BL = 8, CL = 3, Autoprecharge)
BA0 and BA1 together determine which bank undergoes operations. AP = internal precharge begins.
Interleaved bank write waveform
(BL = 8)
BA0 and BA1 together determine which bank undergoes operations.
CLK
CS
RAS
CAS
WE
A10
A0–A9, A11
DQM
CKE
DQ
QA
a0
QA
a1
QA
a2
QA
a3
QA
a4
QA
a5
QA
a6
t
RRD
QB
b0
QB
b1
QA
a7
t
RC
t
RC
t
RAS
t
RAS
t
RP
tRAS
t
RP
t
RCD
t
RCD
t
RCD
CA
a
RA
a
RB
b
RB
b
CA
b
CA
c
RA
a
RA
c
RA
c
QB
b4
QB
b5
QB
b6
QA
c0
QA
c0
t
RRD
Active
Read
Active
Read
Bank A
Bank B
AP
Active
Read
AP
BA0/BA1
Bank
Bank
Bank
Bank
Bank
Bank
CLK
CS
RAS
CAS
WE
A10
A0-A9,A11
DQM
CKE
DQ
t
RC
t
RAS
t
RP
t
RAS
t
RCD
t
RCD
t
RCD
CA
a
RA
a
RB
b
RB
b
CA
b
CA
c
RA
a
RA
c
RA
c
DA
a0
DA
a1
DA
a4
DA
a5
DA
a6
DA
a7
DB
b0
DB
b1
DB
b2
DB
b3
DB
b4
DB
b5
DB
b6
DB
b7
DA
c0
DA
c1
DA
c2
Active
Write
Active
Write
Bank A
Bank B
Active
Write
Precharge
Precharge
BA0/BA1
Bank
Bank
Bank
Bank
Bank
Bank
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS4LC4M16S0-10TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC8M8S0-10FTC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC8M8S0-10TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC8M8S0-75TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC8M8S0-8TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS4LC4M16S0-10TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M16S0-75TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M16S0-8TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M4 | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V |
| AS4LC4M4883C | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:4 MEG x 4 DRAM 3.3V, EDO PAGE MODE |
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