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參數(shù)資料
| 型號： | AS4LC4M16S0-10FTC |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-54 |
| 文件頁數(shù)： | 20/24頁 |
| 文件大小： | 566K |
| 代理商： | AS4LC4M16S0-10FTC |
20
ALLIANCE SEMICONDUCTOR
7/5/00
AS4LC4M16S0
AS4LC16M4S0
Burst read/single write waveform
(BL = 4, CL = 3)
Interleaved bank read waveform
(BL = 4, CL = 3)
BA0 and BA1 together determine which bank undergoes operations.
Single
Write
CLK
CS
RAS
CAS
WE
BA0/BA1
A10
A0–A9,A11
DQM
CKE
DQ
RA
a
CA
a
RA
a
CA
b
CA
r
CA
d
Activate
Read
Read
A
a0
Q
A
a5
A
a4
A
a3
Q
A
a2
Q
A
a1
Q
A
d0
Q
A
d3
Q
A
d2
Q
A
d1
Q
D
D
CLK
CS
RAS
CAS
WE
BA0/BA1
A10
A0–A9, A11
DQM
CKE
DQ
t
CCD
t
CCD
t
CCD
t
RAS
t
RP
t
RCD
RA
a
RB
a
CA
a
CA
b
CB
b
CA
c
QA
a0
QA
a3
Read
QA
a2
QA
a1
QB
a0
QA
b1
QA
b0
QB
a1
QA
b2
QA
c2
QA
c1
QA
c0
QB
b0
QB
b3
QB
b2
QB
b1
Bank A
Bank B
Active
Read
Read
Read
Precharge
RA
a
CB
a
Precharge
RB
a
Bank
Bank
Bank
Bank
Bank
Bank
Bank
Bank
Bank
t
RCD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS4LC4M16S0-10TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC8M8S0-10FTC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC8M8S0-10TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC8M8S0-75TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC8M8S0-8TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS4LC4M16S0-10TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M16S0-75TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M16S0-8TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M4 | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V |
| AS4LC4M4883C | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:4 MEG x 4 DRAM 3.3V, EDO PAGE MODE |
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