參數(shù)資料
型號(hào): AS29LV160B
廠商: Alliance Semiconductor Corporation
英文描述: 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM
中文描述: 3W 200萬(wàn)× 8 / 1米× 16 -閃存EEPROM的CMOS
文件頁(yè)數(shù): 26/29頁(yè)
文件大?。?/td> 561K
代理商: AS29LV160B
8/30/01;
V.0.9.5
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P. 26 of 29
=D%#
6C/+,#
6C/+,,#
D
JEDEC
Symbol
Std Symbol
Parameter
CE
to BYTE switching Low or High
BYTE
switching Low to output High-Z
BYTE
switching High to output Active
-70/80/90/120
Unit
Min
Max
-
t
ELFL
/t
ELFH
t
FLQZ
t
FHQZ
-
10
ns
-
-
30
ns
-
80
-
ns
CE
OE
BYTE
DQ0-DQ14
DQ15/A-1
BYTE
DQ0-DQ14
DQ15/A-1
Word
to
Byte
Byte
to
Word
Data output
Data output
Address input
DQ15 output
t
FLQZ
Data output
DQ0-DQ7
DQ0-DQ14
DQ0-DQ7
Data output
DQ0-DQ14
Address input
t
FHQV
DQ15 output
t
ELFL
t
ELFH
CE
WE
BYTE
falling edge of last WE signal
t
SET
(t
AS
)
t
HOLD
(t
AH
)
See Erase/Program operations table for t
AS
and t
AH
specifications.
RESET#
CE#
OE#
* For sector protect, A6=0, A1=1, A0=0. For sector unprotect, A6=1, A1=1, A0=0.
V
ID
V
IH
Valid*
Valid*
Valid*
SA, A6,
A1, A0
60h
40h
Status
60h
DATA
Sector protect/unprotect
1 μs
Sector protect: 100 μs
Sector unprotect: 10 ms
WE#
Verify
Don’t care
Don’t care
Don’t care
Don’t care
Don’t care
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