參數(shù)資料
型號: AS29LV160B
廠商: Alliance Semiconductor Corporation
英文描述: 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM
中文描述: 3W 200萬× 8 / 1米× 16 -閃存EEPROM的CMOS
文件頁數(shù): 17/29頁
文件大?。?/td> 561K
代理商: AS29LV160B
8/30/01;
V.0.9.5
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P. 17 of 29
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START
Writeunock
bypasscommand
(3 cycles)
Writeunock
bypassprogramcommand
(2 cycles)
DATA poling or
togglebt
successfuly compeed
Last
address
YES
Increment
address
NO
Writeunock
bypassrese command
(2 cycles)
Programmng compeed
555h/AAh
2AAh/55h
555h/20h
Unock bypasscommandsequence
x16 mode(address/data)
xxxh/A0h
Unock bypassprogram
commandsequence
x16 mode(address/data)
programaddress/
programdata
xxxh/90h
Unock bypassrese
commandsequence
x16 mode(address/data)
xxxh/00h
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AS29LV160T 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM
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AS29LV400B-120SI 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3V 512K x 8/256K x 16 CMOS Flash EEPROM
AS29LV400B-120TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3V 512K x 8/256K x 16 CMOS Flash EEPROM