- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381309 > AS29LV160B (Alliance Semiconductor Corporation) 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM PDF資料下載
參數(shù)資料
| 型號： | AS29LV160B |
| 廠商： | Alliance Semiconductor Corporation |
| 英文描述： | 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM |
| 中文描述： | 3W 200萬× 8 / 1米× 16 -閃存EEPROM的CMOS |
| 文件頁數(shù)： | 12/29頁 |
| 文件大小： | 561K |
| 代理商： | AS29LV160B |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁當前第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁
8/30/01;
V.0.9.5
%%
P. 12 of 29
&%:
"&#;&#
Addresses (Word Mode)
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
&#
'<'#
Addresses
(Word Mode)
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
Addresses (Byte Mode)
20h
22h
24h
26h
28h
2Ah
2Ch
2Eh
30h
32h
34h
Data
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
Description
Query unique ASCII string (QRY)
Primary OEM command set
Address for primary extended table
Alternate OEM command set (00h = does not exist)
Address for alternate OEM extended table (00h = does
not exist)
Addresses
(Word Mode)
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
Addresses
(Byte Mode)
36h
38h
3Ah
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
Data
0027h
0036h
0000h
0000h
0004h
0000h
000Ah
0000h
0005h
0000h
0004h
0000h
Description
VccMin.(write/erase), D7-D4:volt, D3-D0: 100 millivolt
VccMax.(write/erase), D7-D4: volt, D3-D0: 100 millivolt
VppMin. Voltage (00h = no Vpp pin present)
VppMax. Voltage (00h = no Vpp in present)
Typical timeout per single byte/word write 2
N
us
Typical timeout for Min. size buffer write 2
N
us (00h = not supported)
Typical timeout per individual block erase 2
N
ms
Typical timeout for full chip erase 2
N
ms (00h = not supported)
Max. timeout for byte/word write 2
N
times typical
Max. timeout for buffer write 2
N
times typical
Max. timeout per individual block erase 2
N
times typical
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Addresses
(Byte Mode)
4Eh
50h
52h
54h
56h
58h
5Ah
5Ch
5Eh
60h
Data
0015h
0002h
0000h
0000h
0000h
0004h
0000h
0000h
0040h
0000h
Description
Device size = 2
N
byte
Flash device interface description
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
Number of erase block regions within device
Erase block region 1 information
相關PDF資料 |
PDF描述 |
|---|---|
| AS29LV160T | 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM |
| AS3502 | Circular Connector; No. of Contacts:3; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:22-9 RoHS Compliant: No |
| AS3520 | Advanced Audio Decoder |
| AS3588A | DIGITAL TIME/SPACE CROSSPOINT SWITCH |
| AS3588AP | DIGITAL TIME/SPACE CROSSPOINT SWITCH |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AS29LV160T | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM |
| AS29LV400 | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3V 512K x 8/256K x 16 CMOS Flash EEPROM |
| AS29LV400B-120SC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3V 512K x 8/256K x 16 CMOS Flash EEPROM |
| AS29LV400B-120SI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3V 512K x 8/256K x 16 CMOS Flash EEPROM |
| AS29LV400B-120TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3V 512K x 8/256K x 16 CMOS Flash EEPROM |
發(fā)布緊急采購，3分鐘左右您將得到回復。