參數(shù)資料
型號: AS29LV160B
廠商: Alliance Semiconductor Corporation
英文描述: 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM
中文描述: 3W 200萬× 8 / 1米× 16 -閃存EEPROM的CMOS
文件頁數(shù): 15/29頁
文件大?。?/td> 561K
代理商: AS29LV160B
8/30/01;
V.0.9.5
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P. 15 of 29
START
PLSCNT = 1
RESET# = V
ID
Wat 1 μs
First Write
Cyce=60h
Tunproect mode
No
Se upsector
address
Sector proect:
write60htosector
addresswth
A6=0, A1=1,
A0=0
Wait 150 μs
Verify sector
proect; write40h
tosector address
wthA6=0,
A1=1, A0=0
Readfromsector
addresswthA6=0,
A1=1, A0=0
Data=01h
sector
PLSCNT=25
No
Increment
PLSCNT
No
Devicefaled
Yes
Yes
Yes
No
START
PLSCNT = 1
RESET# = V
ID
Wait 1 μs
First Write
Cycle=60h
Temporary sector
unproect mode
No
Yes
All sectors
proected
Se upfirst
sector address
Sector unprotect:
write60htosector
addresswth
A6=1, A1=1,
A0=0
Wait 15 ms
Verify sector
unprotect; write40h
tosector address
wthA6=1,
A1=1, A0=0
Readfromsector
addresswthA6=1,
A1=1, A0=0
Data=00h
Last sector
verified
No
Yes
Yes
RemoveV
ID
fromRESET#
Writerese
command
Sector unproect
compee
RemoveV
ID
fromRESET#
Writerese
command
Sector proect
compee
PLSCNT
=1000
Increment
PLSCNT
No
Devicefailed
Yes
Se upnext
sector address
No
Protect all sectors:
Theshadedportiono
thesector protct
algorithmmust be
intiatedfor al
unproectedsectors
beorecalling the
sector unprotect
No
Yes
Yes
Proect
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