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參數(shù)資料
| 型號(hào)： | APTM50DAM19G |
| 廠商： | MICROSEMI CORP |
| 元件分類： | JFETs |
| 英文描述： | 163 A, 500 V, 0.0225 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP6, 5 PIN |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 273K |
| 代理商： | APTM50DAM19G |
APTM50DAM19G
AP
T
M
50
DAM
19
G
–R
ev
3
J
ul
y,
2006
www.microsemi.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
20
60
100
140
180
220
260
ID, Drain Current (A)
t d(
o
n)
an
d
t
d(o
ff)
(n
s
)
VDS=333V
RG=1
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
20
60
100
140
180
220
260
ID, Drain Current (A)
t r
a
nd
t
f(n
s
)
VDS=333V
RG=1
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
0
20
40
60
80 100 120 140
ID, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z
)
Operating Frequency vs Drain Current
VDS=333V
D=50%
RG=1
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t
(A
)
Source to Drain Diode Forward Voltage
Switching Energy vs Current
Eon
Eoff
0
2
4
6
8
10
20
60
100
140
180
220
260
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
VDS=333V
RG=1
TJ=125°C
L=100H
Eon
Eoff
0
2
4
6
8
10
12
14
16
02.557.5
10
12.5
Gate Resistance (Ohms)
Sw
it
c
h
in
g
En
er
g
y(
m
J
)
Switching Energy vs Gate Resistance
VDS=333V
ID=163A
TJ=125°C
L=100H
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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