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參數(shù)資料
| 型號(hào)： | APTM50DAM19G |
| 廠商： | MICROSEMI CORP |
| 元件分類： | JFETs |
| 英文描述： | 163 A, 500 V, 0.0225 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP6, 5 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 273K |
| 代理商： | APTM50DAM19G |
APTM50DAM19G
AP
T
M
50
DAM
19
G
–R
ev
3
J
ul
y,
2006
www.microsemi.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 500V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 81.5A
19
22.5
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 10mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
22.4
Coss
Output Capacitance
4.8
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.36
nF
Qg
Total gate Charge
492
Qgs
Gate – Source Charge
132
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 163A
260
nC
Td(on)
Turn-on Delay Time
18
Tr
Rise Time
35
Td(off)
Turn-off Delay Time
87
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 163A
RG = 1
77
ns
Eon
Turn-on Switching Energy
3020
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 163A, RG = 1
2904
J
Eon
Turn-on Switching Energy
4964
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 163A, RG = 1
3384
J
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
350
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
600
A
IF
DC Forward Current
Tc = 70°C
120
A
IF = 120A
1.6
1.8
IF = 240A
1.9
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
1.4
V
Tj = 25°C
130
trr
Reverse Recovery Time
Tj = 125°C
170
ns
Tj = 25°C
440
Qrr
Reverse Recovery Charge
IF = 120A
VR = 400V
di/dt = 400A/s
Tj = 125°C
1840
nC
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