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參數(shù)資料
| 型號： | APTM50DAM19G |
| 廠商： | MICROSEMI CORP |
| 元件分類： | JFETs |
| 英文描述： | 163 A, 500 V, 0.0225 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP6, 5 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 273K |
| 代理商： | APTM50DAM19G |
APTM50DAM19G
AP
T
M
50
DAM
19
G
–R
ev
3
J
ul
y,
2006
www.microsemi.com
1 – 6
G2
S2
VBUS
0/VBUS
CR1
OUT
Q2
OUT
0/VBUS
VBUS
G2
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
163
ID
Continuous Drain Current
Tc = 80°C
122
IDM
Pulsed Drain current
652
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
22.5
m
PD
Maximum Power Dissipation
Tc = 25°C
1136
W
IAR
Avalanche current (repetitive and non repetitive)
46
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
VDSS = 500V
RDSon = 19m typ @ Tj = 25°C
ID = 163A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Boost chopper
MOSFET Power Module
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