- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51277 > APTM50DAM19G (MICROSEMI CORP) 163 A, 500 V, 0.0225 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | APTM50DAM19G |
| 廠商： | MICROSEMI CORP |
| 元件分類： | JFETs |
| 英文描述： | 163 A, 500 V, 0.0225 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP6, 5 PIN |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 273K |
| 代理商： | APTM50DAM19G |
APTM50DAM19G
AP
T
M
50
DAM
19
G
–R
ev
3
J
ul
y,
2006
www.microsemi.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
rm
al
I
m
p
e
da
nc
e
(°
C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5.5V
6V
6.5V
7V
7.5V
8V
0
100
200
300
400
500
600
700
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
I D
,
D
ra
in
C
u
rr
e
n
t(
A
)
VGS=10&15V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
100
200
300
400
500
0
123
4567
8
VGS, Gate to Source Voltage (V)
I D
,D
rai
n
C
u
rr
en
t
(A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
0
100
200
300
400
ID, Drain Current (A)
R
DS
(o
n
)
D
ra
in
t
o
S
o
u
rce
O
N
R
esi
st
an
ce
Normalized to
VGS=10V @ 81.5A
0
20
40
60
80
100
120
140
160
180
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,D
C
Dr
a
in
Cu
rr
e
n
t
(A
)
DC Drain Current vs Case Temperature
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM50DAM35T | 99 A, 500 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM50DAM35T | 99 A, 500 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM50DDAM65T3 | 51 A, 500 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50DDAM65T3 | 51 A, 500 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50DHM38 | 90 A, 500 V, 0.038 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM50DAM35T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Boost chopper MOSFET Power Module |
| APTM50DAM35TG | 功能描述:MOSFET N-CH 500V 99A SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM50DAM38CT | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Boost chopper SiC FWD diode MOSFET Power Module |
| APTM50DAM38CTG | 功能描述:MOSFET N-CH 500V 90A SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM50DAM38T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Boost chopper MOSFET Power Module |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。