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參數(shù)資料
| 型號： | APTGT75TL60T3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 217K |
| 代理商： | APTGT75TL60T3G |
APTGT75TL60T3G
APT
G
T
75T
L
60T
3G
–
Rev0
M
ar
ch,
2009
www.microsemi.com
5- 7
Output Characteristics (VGE=15V)
TJ=25°C
TJ=150°C
0
25
50
75
100
125
150
0
0.5
1
1.5
2
2.5
3
VCE (V)
I C
(A
)
Output Characteristics
VGE=15V
VGE=13V
VGE=19V
VGE=9V
0
25
50
75
100
125
150
0
0.5
1
1.522.5
33.5
VCE (V)
I C
(A
)
TJ = 150°C
Transfert Characteristics
TJ=25°C
TJ=150°C
0
25
50
75
100
125
150
5
678
9
10
11
12
VGE (V)
I C
(A
)
Energy losses vs Collector Current
Eon
Eoff
0
1
2
3
4
5
0
25
50
75
100
125
150
IC (A)
E
(mJ)
VCE = 300V
VGE = 15V
RG = 4.7
TJ = 150°C
Eon
Eoff
0
1
2
3
4
5
0
5
10
15
20
25
30
35
40
Gate Resistance (ohms)
E
(
m
J
)
VCE = 300V
VGE =15V
IC = 75A
TJ = 150°C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
25
50
75
100
125
150
175
0
100 200 300 400 500 600 700
VCE (V)
I C
(A
)
VGE=15V
TJ=150°C
RG=4.7
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
The
rm
a
lI
m
pe
da
nc
e
(
°C
/W
)
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