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參數(shù)資料
| 型號： | APTGT75TL60T3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 217K |
| 代理商： | APTGT75TL60T3G |
APTGT75TL60T3G
APT
G
T
75T
L
60T
3G
–
Rev0
M
ar
ch,
2009
www.microsemi.com
2- 7
All ratings @ Tj = 25°C unless otherwise specified
Q1 to Q4 Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
A
Tj = 25°C
1.5
1.9
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 75A
Tj = 150°C
1.7
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 600A
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
600
nA
Q1 to Q4 Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
4620
Coes
Output Capacitance
300
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
140
pF
QG
Gate charge
VGE=±15V, IC=75A
VCE=300V
0.8
C
Td(on)
Turn-on Delay Time
110
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
200
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7Ω
40
ns
Td(on)
Turn-on Delay Time
120
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
250
Tf
Fall Time
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7Ω
60
ns
Tj = 25°C
0.35
Eon
Turn-on Switching Energy
Tj = 150°C
0.6
mJ
Tj = 25°C
2.2
Eoff
Turn-off Switching Energy
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7Ω
Tj = 150°C
2.6
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 360V
tp ≤ 6s ; Tj = 150°C
380
A
RthJC
Junction to Case Thermal Resistance
0.60
°C/W
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相關(guān)代理商/技術(shù)參數(shù) |
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| APTGT75X120BTP3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
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