參數資料
型號: APTGT75TL60T3G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 100 A, 600 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, SP3, 25 PIN
文件頁數: 1/7頁
文件大?。?/td> 217K
代理商: APTGT75TL60T3G
APTGT75TL60T3G
APT
G
T
75T
L
60T
3G
Rev0
M
ar
ch,
2009
www.microsemi.com
1- 7
Q1 to Q4 Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
100
IC
Continuous Collector Current
TC = 80°C
75
ICM
Pulsed Collector Current
TC = 25°C
140
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
250
W
RBSOA Reverse Bias Safe Operating Area
TJ = 150°C
150A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 10/11/12 ; 7/8 …
VCES = 600V
IC = 75A @ Tc = 80°C
Application
Solar converter
Uninterruptible Power Supplies
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Three level inverter
Trench + Field Stop IGBT
Power Module
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